HiPerFET Power MOSFETs

VDSS = 100 V ID25 = 80 A RDS(on) = 12.5 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammabilit

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

HiPerFET Power MOSFETs Q-Class

VDSS = 100 V ID25 = 80 A RDS(on) = 15 mΩ trr≤ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features • IXYS advanced low gate charge process • International standard packages • Low gate charge and capacitance - ea

HiPerFETTM MOSFET ISOPLUS220

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

HiPerFET Power MOSFETs

VDSS = 100 V ID25 = 80 A RDS(on) = 12.5 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammabilit

SIPMOS Power-Transistor

Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated

55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET

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