HiPerFET™ MOSFET ISOPLUS220™

Electrically Isolated Back Surface

Features

● Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

● Low drain to tab capacitance(<35pF)

● Low RDS (on)

● Rugged polysilicon gate cell structure

● Unclamped Inductive Switching (UIS) rated

● Fast intrinsic Rectifier

Applications

● DC-DC converters

● Battery chargers

● Switched-mode and resonant-mode power supplies

● DC choppers

● AC motor control

Advantages

● Easy assembly: no screws or isolation foils required

● Space savings

● High power density

● Low collector capacitance to ground (low EMI)