HiPerFET Power MOSFETs

VDSS = 100 V ID25 = 80 A RDS(on) = 12.5 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammabilit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

HiPerFET Power MOSFETs Q-Class

VDSS = 100 V ID25 = 80 A RDS(on) = 15 mΩ trr≤ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features • IXYS advanced low gate charge process • International standard packages • Low gate charge and capacitance - ea

N-Channel 100-V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

N-Channel 100-V (D-S) 175 째C MOSFET

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N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.06093 Mbytes Page：6 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.6474 Mbytes Page：5 Pages

N-CHANNEL MOSFET in a TO-263 Plastic Package

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