HiPerFETTM MOSFET ISOPLUS220

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

HiPerFET™ MOSFET ISOPLUS220™

N-Channel 100-V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

N-Channel 100-V (D-S) 175 째C MOSFET

文件：974.83 Kbytes Page：7 Pages

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.06093 Mbytes Page：6 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.6474 Mbytes Page：5 Pages

N-CHANNEL MOSFET in a TO-263 Plastic Package

文件：887.74 Kbytes Page：6 Pages