Cool MOS Power Transistor

Cool MOS™ Power Transistor Features • New revolutioanary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plaing; RoHS compliant • Qualified according to JEDEC for tar

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS Power Transistor

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Cool MOS Power Transistor

文件：987.87 Kbytes Page：13 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS Power Transistor

文件：987.87 Kbytes Page：13 Pages

Cool MOS Power Transistor

文件：640.9 Kbytes Page：13 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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IGBT with integrated diode in packages offering space saving advantage

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Power MOSFET

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N-CHANNEL SILICON POWER MOSFETFeatures

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