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SPD03N60C3价格
参考价格：￥3.1289
型号：SPD03N60C3 品牌：INFINEON 备注：这里有SPD03N60C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPD03N60C3批发/采购报价，SPD03N60C3行情走势销售排行榜，SPD03N60C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPD03N60C3 | Cool MOS Power Transistor Cool MOS™ Power Transistor Features • New revolutioanary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plaing; RoHS compliant • Qualified according to JEDEC for tar | Infineon 英飞凌 |   | |
SPD03N60C3 | N-Channel MOSFET Transistor • DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
SPD03N60C3 | Cool MOS Power Transistor 文件：640.9 Kbytes Page：13 Pages | Infineon 英飞凌 | | |
SPD03N60C3 | Cool MOS Power Transistor 文件：987.87 Kbytes Page：13 Pages | Infineon 英飞凌 | | |
SPD03N60C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
Cool MOS Power Transistor 文件：987.87 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
Cool MOS Power Transistor 文件：640.9 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • Ultra low current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | ||
Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：3.20783 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated 文件：599.57 Kbytes Page：14 Pages | Infineon 英飞凌 | |
SPD03N60C3产品属性
- 类型
描述
- 型号
SPD03N60C3
- 功能描述
MOSFET MOSFET N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NIFINEON |
24+ |
TO-252 |
9750 |
绝对原装现货,价格低,欢迎询购! |
|||
Infineon/英飞凌 |
24+ |
TO-252-2(DPAK) |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
INFINEON |
23+ |
TO252 |
6996 |
只做原装正品现货 |
|||
Infineon/英飞凌 |
21+ |
TO-252-2(DPAK) |
6820 |
只做原装,质量保证 |
|||
infineon |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
10800 |
全新原装正品支持含税 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
SPD03N60C3规格书下载地址
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DdatasheetPDF页码索引
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