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SPB11N60价格
参考价格：￥8.6606
型号：SPB11N60C3 品牌：INFINEON 备注：这里有SPB11N60多少钱，2025年最近7天走势，今日出价，今日竞价，SPB11N60批发/采购报价，SPB11N60行情走势销售排行榜，SPB11N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Cool MOS??Power Transistor Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances | Infineon 英飞凌 |   | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • 150 °C operating temperature | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.86869 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | ||
Cool MOS Power Transistor 文件：475.58 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
Cool MOS Power Transistor 文件：475.58 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.04041 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.04041 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | ||
New revolutionary high voltage technology Ultra low gate charge 文件：691.82 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
Isc N-Channel MOSFET Transistor 文件：188.97 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
New revolutionary high voltage technology Ultra low gate charge 文件：691.82 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.85356 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.03276 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.94216 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL DEPLETION-MODE POWER MOSFET 文件：220.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：297.95 Kbytes Page：2 Pages | ISC 无锡固电 | |
SPB11N60产品属性
- 类型
描述
- 型号
SPB11N60
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
PG-TO263-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
英飞翎 |
20+ |
D2PAK(TO-263) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINE0N |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
24+ |
TO263 |
5000 |
十年沉淀唯有原装 |
|||
INFINEON/英飞凌 |
24+ |
SOT-263 |
17389 |
原装进口假一罚十 |
|||
Infineon(英飞凌) |
23+ |
PG-TO263-3 |
19850 |
原装正品,假一赔十 |
|||
INFINEON |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
23+ |
TO-263 |
30000 |
代理全新原装现货,价格优势 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
2023+ |
TO-263 |
1000 |
专注全新正品,优势现货供应 |
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SPB11N60数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
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2019-4-24SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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