SPB11N60C3价格

参考价格:¥8.6606

型号:SPB11N60C3 品牌:INFINEON 备注:这里有SPB11N60C3多少钱,2026年最近7天走势,今日出价,今日竞价,SPB11N60C3批发/采购报价,SPB11N60C3行情走势销售排行榜,SPB11N60C3报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SPB11N60C3

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

INFINEON

英飞凌

SPB11N60C3

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • 150 °C operating temperature

INFINEON

英飞凌

SPB11N60C3

丝印代码:D2PAK;Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

SPB11N60C3

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

VBSEMI

微碧半导体

SPB11N60C3

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

INFINEON

英飞凌

SPB11N60C3

Cool MOS Power Transistor

文件:475.58 Kbytes Page:13 Pages

INFINEON

英飞凌

Cool MOS Power Transistor

文件:475.58 Kbytes Page:13 Pages

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

INFINEON

英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

INFINEON

英飞凌

SPB11N60C3产品属性

  • 类型

    描述

  • 型号

    SPB11N60C3

  • 功能描述

    MOSFET COOL MOS N-CH 650V 11A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-15 17:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
25+
206
公司优势库存 热卖中!
Infineon(英飞凌)
25+
TO-263-3
18798
原装正品现货,原厂订货,可支持含税原型号开票。
Infineon/英飞凌
21+
PG-TO263-3
6820
只做原装,质量保证
INFINEON
17+
TO-263-3-
6200
100%原装正品现货
INFINEON
24+
TO263
5000
全新原装正品,现货销售
INFINEON/英飞凌
25+
TO-263
11300
全新原装正品支持含税
INFINEON
24+
P-TO263-3-2
8866
Infineon(英飞凌)
24+
N/A
9855
原装正品现货支持实单
INFINEON
23+
TO263
6996
只做原装正品现货
Infineon
24+
NA
3000
进口原装正品优势供应

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