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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB11N60S5 | Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 |   | |
SPB11N60S5 | Isc N-Channel MOSFET Transistor 文件：188.97 Kbytes Page：2 Pages | ISC 无锡固电 | | |
SPB11N60S5 | New revolutionary high voltage technology Ultra low gate charge 文件：691.82 Kbytes Page：11 Pages | Infineon 英飞凌 | | |
SPB11N60S5 | N-Channel 650 V (D-S) MOSFET 文件：1.04041 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
New revolutionary high voltage technology Ultra low gate charge 文件：691.82 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor • DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤380mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.03944 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
SPB11N60S5产品属性
- 类型
描述
- 型号
SPB11N60S5
- 功能描述
MOSFET COOL MOS N-CH 600V 11A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
3288 |
原厂直销,现货供应,账期支持! |
|||
Infineon |
1844+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON/英飞凌 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
TO263 |
25+ |
13875 |
12588 |
原装正品 |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
54 |
全新原装正品支持含税 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
INF |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON/英飞凌 |
2022+ |
P-TO263-3-2 |
48000 |
只做原装,原装,假一罚十 |
|||
INFINEON |
23+ |
TO-263 |
7936 |
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SPB11N60S5规格书下载地址
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SPB11N60S5数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
2019-8-6SPA07N60C3
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2019-4-24SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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