您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第8751页 > SPB1

SPB1价格

参考价格：￥255.2596

型号：SPB1 品牌：Hammond 备注：这里有SPB1多少钱，2025年最近7天走势，今日出价，今日竞价，SPB1批发/采购报价，SPB1行情走势销售排行榜，SPB1报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SPB1

Ensemble de panneau pivotant

文件：52.12 Kbytes Page：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

SPB1

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：211.98 Kbytes Page：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

SPB1

包装：袋 描述：PANEL SWING KIT 盒子，外壳，机架 盒组件

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

SPB1

包装：袋 描述：PANEL SWING KIT 盒子，外壳，机架 盒组件

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

SPB1005

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1005-R10M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1005-R12M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1005-R15M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1005-R22M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1007

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1007-R12M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1007-R15M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1007-R17M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1007-R22M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1007-R23M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1007-R27M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1007-R30M

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB100UFA

5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time

Single Phase Bridge - High Voltage SPB Series 2.0A • 70ns

VMI

SPB100UFB

5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time

Single Phase Bridge - High Voltage SPB Series 2.0A • 70ns

VMI

SPB1012

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1012-R10Y

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1012-R12Y

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1012-R13Y

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1012-R15Y

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB1012-R33Y

Power Bead Inductors

Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free

Bourns

伯恩斯

SPB11N60C2

Cool MOS??Power Transistor

Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

Infineon

英飞凌

SPB11N60C3

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Infineon

英飞凌

SPB11N60C3

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • 150 °C operating temperature

Infineon

英飞凌

SPB11N60C3

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

SPB11N60C3

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

VBSEMI

微碧半导体

SPB11N60S5

Cool MOS??Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

Infineon

英飞凌

SPB10015

2 X 100A SCHOTTKY BARRIER RECTIFIER

文件：128.259 Kbytes Page：2 Pages

Microsemi

美高森美

SPB10035

2 X 100A SCHOTTKY BARRIER RECTIFIER

文件：131.039 Kbytes Page：2 Pages

Microsemi

美高森美

SPB10035

2 X 100A SCHOTTKY BARRIER RECTIFIER

Microchip

微芯科技

SPB10040

2 X 100A SCHOTTKY BARRIER RECTIFIER

文件：131.039 Kbytes Page：2 Pages

Microsemi

美高森美

SPB10045

2 X 100A SCHOTTKY BARRIER RECTIFIER

文件：131.039 Kbytes Page：2 Pages

Microsemi

美高森美

SPB10045E3

DIODE MODULE 45V 100A SOT227

Microchip

微芯科技

SPB1007-R17M

贴片功率电感 10.5*8.0*7.5mm 0.35m Ohms 175nH ±20% 61A

Bourns

伯恩斯

SPB10080

2 X 100A SCHOTTKY BARRIER RECTIFIER

文件：131.039 Kbytes Page：2 Pages

Microsemi

美高森美

SPB10090

2 X 100A SCHOTTKY BARRIER RECTIFIER

文件：131.039 Kbytes Page：2 Pages

Microsemi

美高森美

SPB100N03S2-03

OptiMOS Power-Transistor

文件：416.42 Kbytes Page：8 Pages

Infineon

英飞凌

SPB100N03S2-03G

OptiMOS Power-Transistor

文件：682.48 Kbytes Page：9 Pages

Infineon

英飞凌

SPB100N03S2L-03

OptiMOS Power-Transistor

文件：417.39 Kbytes Page：8 Pages

Infineon

英飞凌

SPB100N04S2-04

OptiMOS Power-Transistor

文件：311.68 Kbytes Page：8 Pages

Infineon

英飞凌

SPB100N04S2L-03

OptiMOS Power-Transistor

文件：309.18 Kbytes Page：8 Pages

Infineon

英飞凌

SPB100N06S2-05

OptiMOS Power-Transistor

文件：312.78 Kbytes Page：8 Pages

Infineon

英飞凌

SPB100N06S2L-05

OptiMOS Power-Transistor

文件：310.45 Kbytes Page：8 Pages

Infineon

英飞凌

SPB100N08S2-07

OptiMOS Power-Transistor

文件：309.28 Kbytes Page：8 Pages

Infineon

英飞凌

SPB100N08S2L-07

OptiMOS Power-Transistor

文件：310.26 Kbytes Page：8 Pages

Infineon

英飞凌

SPB100UFA

Single Phase Bridge - High Voltage SPB Series 2.0A ??70ns

文件：142.47 Kbytes Page：2 Pages

VMI

SPB100UFB

Single Phase Bridge - High Voltage SPB Series 2.0A ??70ns

文件：142.47 Kbytes Page：2 Pages

VMI

SPB101

Detect Switches

文件：183.79 Kbytes Page：1 Pages

COPAL

尼得科

SPB10100

2 X 100A SCHOTTKY BARRIER RECTIFIER

文件：131.039 Kbytes Page：2 Pages

Microsemi

美高森美

SPB10N10

SIPMOS Power-Transistor

文件：787.36 Kbytes Page：8 Pages

Infineon

英飞凌

SPB10N10L

SIPMOS Power-Transistor

文件：240.62 Kbytes Page：8 Pages

Infineon

英飞凌

SPB11N60C2

N-Channel 650 V (D-S) MOSFET

文件：1.86869 Mbytes Page：8 Pages

VBSEMI

微碧半导体

SPB11N60C3

Cool MOS Power Transistor

文件：475.58 Kbytes Page：13 Pages

Infineon

英飞凌

SPB11N60C3_07

Cool MOS Power Transistor

文件：475.58 Kbytes Page：13 Pages

Infineon

英飞凌

SPB11N60C5

N-Channel 650 V (D-S) MOSFET

文件：1.04041 Mbytes Page：8 Pages

VBSEMI

微碧半导体

SPB11N60S5

New revolutionary high voltage technology Ultra low gate charge

文件：691.82 Kbytes Page：11 Pages

Infineon

英飞凌

SPB1产品属性

  • 类型

    描述

  • 型号

    SPB1

  • 功能描述

    Schottky Rectifier

SPB1供应商更多...

更新时间：2025-12-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
SPB18P06P
Infineon(英飞凌)
24+
标准封装
9748
原厂渠道供应,大量现货,原型号开票。
询价
中天科工半导体（深圳）有限公司
SPB1H24S5
CONTECH
25+
全新-电源模块
14146
CONTECH电源模块SPB1H24S5交期短价格好#即刻询购立享优惠#长期有排单订
询价
深圳市联世界科技有限公司
SPB17N80C3ATMA1
Infineon(英飞凌)
24+/25+
10000
36000
100%原装正品真实库存,支持实单
询价
深圳市恒达亿科技有限公司
SPB17N80C3
INFINEON
25+
TO-263-3
6000
全新原装现货、诚信经营!
询价
深圳市赛特兴科技有限公司
SPB17N80C3
INFINEON
23+
TO-263
1000
正规渠道,只有原装!
询价
柒号芯城电子商务(深圳)有限公司
SPB17N80C3ATMA1
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
深圳市拓亿芯电子有限公司
SPB17N80C3
INFINEON/英飞凌
25+
TO-263
22000
百分百原装进口现货
询价
深圳市得捷芯城科技有限公司
SPB17N80C3
Infineon(英飞凌)
24+
TO-263
11948
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市美思瑞电子科技有限公司
SPB18P06P
INFINEON
22+
原厂封装
12450
原装正品，实单请联系
询价
深圳市云美电子科技有限公司
SPB160N04S2-03
INFINEON
24+
TO263-6
66500
只做原装进口现货
询价

SPB1芯片相关品牌

SPB1规格书下载地址

SPB1参数引脚图相关

SPB1数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示