| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB1007 | Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free | BOURNS 伯恩斯 |   | |
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free | BOURNS 伯恩斯 | | ||
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free | BOURNS 伯恩斯 | | ||
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free | BOURNS 伯恩斯 | | ||
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free | BOURNS 伯恩斯 | | ||
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free | BOURNS 伯恩斯 | | ||
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free | BOURNS 伯恩斯 | | ||
Power Bead Inductors Features - Shielded construction for low radiation - High rated current - Low DCR - RoHS compliant and halogen free | BOURNS 伯恩斯 | | ||
贴片功率电感 10.5*8.0*7.5mm 0.35m Ohms 175nH ±20% 61A | BOURNS 伯恩斯 | | ||
PHASE CONTROL THYRISTOR PHASE CONTROL THYRISTOR Repetitive voltage up to 2400 V Mean on-state current 1270 A Surge current 19 kA | POSEICO | | ||
Photo Interrupter Photo Interrupter For contactless SW, object detection Overview CNA1007H is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elem | PANASONIC 松下 | | ||
uP Compatible, Double-Buffered D to A Converters 文件：369.16 Kbytes Page：22 Pages | NSC 国半 | | ||
uP Compatible, Double-Buffered D to A Converters 文件：369.16 Kbytes Page：22 Pages | NSC 国半 | | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 文件：38.41 Kbytes Page：2 Pages | POLYFET | |
SPB1007产品属性
- 类型
描述
- 封装/外壳：
10.5*8.0*7.5mm
- DC电阻(DCR)：
0.35m Ohms
- 电感：
175nH
- 偏差：
±20%
- 额定电流：
61A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Bourns Inc. |
25+ |
- |
18746 |
样件支持,可原厂排单订货! |
|||
Bourns |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
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SPB1007规格书下载地址
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SPB1007数据表相关新闻
SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SP8K24-TB
SP8K24-TB
2021-10-20SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
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2019-4-24SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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