SPA06N60价格
参考价格:¥5.2900
型号:SPA06N60C3 品牌:Infineon 备注:这里有SPA06N60多少钱,2026年最近7天走势,今日出价,今日竞价,SPA06N60批发/采购报价,SPA06N60行情走势销售排行榜,SPA06N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CoolMOS Power Transistor CoolMOS Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv/dtrated • Improved transconductance • Fully isolated packag | INFINEON 英飞凌 | |||
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica | ISC 无锡固电 | |||
500V-900V CoolMOS™ N-Channel Power MOSFET Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per; | INFINEON 英飞凌 | |||
CoolMOSTM Power Transistor 文件:227.83 Kbytes Page:11 Pages | INFINEON 英飞凌 | |||
CoolMOSTM Power Transistor 文件:227.83 Kbytes Page:11 Pages | INFINEON 英飞凌 | |||
CoolMOSTM Power Transistor 文件:227.83 Kbytes Page:11 Pages | INFINEON 英飞凌 | |||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | |||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode •75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh | INFINEON 英飞凌 | |||
POWER FIELD EFFECT TRANSISTOR 文件:191.5 Kbytes Page:6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 文件:278.56 Kbytes Page:13 Pages | INFINEON 英飞凌 | |||
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 文件:278.56 Kbytes Page:13 Pages | INFINEON 英飞凌 |
SPA06N60产品属性
- 类型
描述
- Package :
TO-220 FullPAK
- VDS max:
600.0V
- RDS (on) max:
750.0mΩ
- Polarity :
N
- ID max:
6.2A
- Ptot max:
32.0W
- IDpuls max:
18.6A
- VGS(th) min max:
2.1V 3.9V
- QG :
24.0nC
- Rth :
3.92K/W
- RthJC max:
3.92K/W
- RthJA max:
80.0K/W
- Operating Temperature min:
-55.0°C
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
26+ |
TO-220F |
7936 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
INFINEON |
25+23+ |
TO-220F |
35452 |
绝对原装正品全新进口深圳现货 |
|||
Infineon/英飞凌 |
21+ |
TO-220F(TO-220IS) |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
4900 |
进口原装假一赔十支持含税 |
|||
Infineon(英飞凌) |
25+ |
TO-220F(TO-220IS) |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Infineon |
17+ |
TO-220F |
6200 |
||||
Infineon(英飞凌) |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
原装INFINEO |
19+ |
TO-220 |
20000 |
||||
INFINEON |
1728+ |
TO-220 |
7500 |
只做原装进口,假一罚十 |
|||
三年内 |
1983 |
只做原装正品 |
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DdatasheetPDF页码索引
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