CoolMOS Power Transistor

CoolMOS Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv/dtrated • Improved transconductance • Fully isolated packag

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

CoolMOSTM Power Transistor

文件：227.83 Kbytes Page：11 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOSTM Power Transistor

文件：227.83 Kbytes Page：11 Pages

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

IGBT with integrated diode in packages offering space saving advantage

文件：1.92413 Mbytes Page：16 Pages

IGBT with integrated diode in packages offering space saving advantage

文件：1.74081 Mbytes Page：16 Pages

POWER FIELD EFFECT TRANSISTOR

文件：191.5 Kbytes Page：6 Pages