SM23价格

参考价格:¥0.3250

型号:SM2301 品牌:SEM 备注:这里有SM23多少钱,2026年最近7天走势,今日出价,今日竞价,SM23批发/采购报价,SM23行情走势销售排行榜,SM23报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SM23

Aluminum Electrolytic Capacitors

文件:5.29445 Mbytes Page:66 Pages

KEMETKEMET Corporation

基美

SM23

Schottky Diodes

DACO

罡境电子

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE - 20 to 60 Volts CURRENT - 2.0 Amperes FEATURES * Ideal for surface mounted applications * Low leakage current for high efficiency * High current capability

DCCOM

道全

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

UNIOHM

厚声

Schottky Barrier Rectifiers Reverse Voltage 20 to100V

Reverse Voltage 20 to 100V FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage highfrequency inverters, free wheeling,and polarity protection applications * Guardringfor over v

LRC

乐山无线电

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

TAYCHIPST

泰迪斯电子

Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 2.0A

Reverse Voltage 20 to 100V Forward Current 2.0A FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage highfrequency inverters, free wheeling,and polarity protection applications

LRC

乐山无线电

2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

GWSEMI

唯圣电子

2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 60 Volts CURRENT 2.0 Ampere FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

BYTES

2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

UNIOHM

厚声

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

TAYCHIPST

泰迪斯电子

Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 2.0A

Reverse Voltage 20 to100V Forward Current 2.0A FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications * Guardring fo

LRC

乐山无线电

SCHOTTKY DIODES REVERSE VOLT 20-100V FORWARD CURRENT 2A

DESCRIPTION The SM220 B~SM 2100 B are available in SMB p ackage FEATURES  For surface mount applications  Metal-Semiconductor Junction with Guarding  Epitaxial Construction  Metal-Semiconductor Junction with Guarding  Very Low forward voltage drop  High Current capability  For

AITSEMI

创瑞科技

Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 2.0A

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications * Guardring for over voltage protection * High temperature soldering

LRC

乐山无线电

Voltage 20 ~ 100 V 2.0 Amp Schottky Barrier Rectifiers

FEATURES ● Low forward surge current ● Ideal for surface mounted applications ● Low leakage current

SECOS

喜可士

2.0 AMP LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

GWSEMI

唯圣电子

2.0 Amp Surface Mount Schottky Barrier Rectifiers

FEATURES • Batch process design, excellent power dissipation offers.better reverse leakage current and thermal resistance. • Low profile surface mounted application.in order to optimize board space. • Low power loss and low forward voltage drop • High surge, high current capability, and high e

SECOS

喜可士

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

Best-in-class USB 3.2 Gen2 x2 Portable SSD Controller Solution

Ultra High Performance Sequential Read: up to 2,100 MB/s Sequential Write: up to 2,000 MB/s KEY FEATURES Broad host device compatibility Compliant with USB 3.2/2.0 and Type-C spec Release 1.3 Support s Type -C CC Logic Data Integrity and Security Supports Fingerprint Secure Self-encryptin

SILICONMOTION

慧荣科技

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

LED Lamp

Features • Colorless transparency lens type • Compact type • Radiation size 1.5mm × 2.9mm • Surface mount lead configuration

AUK

Chip LED

Features • Colorless transparency lens type • Compact type • Radiation size 1.3mm × 2.9mm • Surface mount lead configuration

AUK

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

1200 VOLT ULTRA FAST RECOVERY RECTIFIER

DESCRIPTION High Voltage, Low Leakage, Ultra Fast Rectifier KEY FEATURES • Available in axial leaded package • Ultra Fast Recovery Time • High Voltage • Metallurgical bonding • Voidless hermetically sealed glass package • TX, TXV and space level screening available Per In

MICROSEMI

美高森美

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

VBSEMI

微碧半导体

2.0 Amp Surface Mount Schottky Barrier Rectifiers

FEATURES ● Schottky barrier rectifier ● Guardring protection ● Low forward voltage ● Reverse energy tested ● High current capability ● Extremely low thermal resistance

SECOS

喜可士

2.0A 30V Schottky diode

文件:431.257 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

High current capability

文件:492.1 Kbytes Page:2 Pages

DGNJDZ

南晶电子

20V N-Channel MOSFET

SEMIWAY

深美微

小信号场效应管

ETC

知名厂家

N-Channel Enhancement Mode MOSFET

文件:264.98 Kbytes Page:11 Pages

SINOPWER

大中集成电路

N-Channel 20 V (D-S) MOSFET

文件:1.05276 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

文件:264.98 Kbytes Page:11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:168.71 Kbytes Page:12 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:168.71 Kbytes Page:12 Pages

SINOPWER

大中集成电路

SSD (Solid-State Disk)

文件:1.36774 Mbytes Page:4 Pages

APACER

宇瞻

SSD (Solid-State Disk)

文件:1.46985 Mbytes Page:4 Pages

APACER

宇瞻

N-Channel Enhancement Mode MOSFET

文件:263.13 Kbytes Page:11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:263.13 Kbytes Page:11 Pages

SINOPWER

大中集成电路

SSD (Solid-State Disk)

文件:1.42242 Mbytes Page:4 Pages

APACER

宇瞻

Released from Engineering

文件:805.72 Kbytes Page:1 Pages

DBUNLIMITED

P-Channel Enhancement Mode MOSFET

文件:262.39 Kbytes Page:11 Pages

SINOPWER

大中集成电路

P-Channel Enhancement Mode MOSFET

文件:262.39 Kbytes Page:11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:171.92 Kbytes Page:12 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:171.92 Kbytes Page:12 Pages

SINOPWER

大中集成电路

Released from Engineering

文件:714.79 Kbytes Page:1 Pages

DBUNLIMITED

P-Channel Enhancement Mode MOSFET

文件:172.51 Kbytes Page:12 Pages

SINOPWER

大中集成电路

SM23产品属性

  • 类型

    描述

  • 型号

    SM23

  • 制造商

    IDEC CORPORATION

  • 功能描述

    SENS.MAGNETIC. DIAM.12 NO+NC

更新时间:2026-1-27 18:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SKsemi/台灣SK
24+
SOT23-3
20000
十年沉淀唯有原装
SINOPOWER
2447+
SOT-23
9657
只做原装正品假一赔十为客户做到零风险!!
ANPEC/茂达电子
25+
SOT25
918000
明嘉莱只做原装正品现货
SINOPOWER/大中
2025+
SOT-23
5000
原装进口,免费送样品!
SINOPOWER
16+
SOT-23
3200
进口原装现货/价格优势!
sinopower
2020
SOT-23
20
全新原装正品现货
NK/南科功率
2025+
SOT-23
3560
国产南科平替供应大量
VBsemi(微碧)
24+
N/A
28630
原装正品现货支持实单
SM/明微
25+
ESOP8
92000
全新原装现货
SINOPOWER/大中
25+
SOT-23
45810
SINOPOWER/大中全新特价SM2333PSA-TRG即刻询购立享优惠#长期有货

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