SM230价格

参考价格:¥0.3250

型号:SM2301 品牌:SEM 备注:这里有SM230多少钱,2026年最近7天走势,今日出价,今日竞价,SM230批发/采购报价,SM230行情走势销售排行榜,SM230报价。
型号 功能描述 生产厂家 企业 LOGO 操作
SM230

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE - 20 to 60 Volts CURRENT - 2.0 Amperes FEATURES * Ideal for surface mounted applications * Low leakage current for high efficiency * High current capability

DCCOM

道全

SM230

2.0A 30V Schottky diode

文件:431.257 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

SM230

Schottky 

SUNMATE

森美特

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

UNIOHM

厚声

Schottky Barrier Rectifiers Reverse Voltage 20 to100V

Reverse Voltage 20 to 100V FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage highfrequency inverters, free wheeling,and polarity protection applications * Guardringfor over v

LRC

乐山无线电

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

TAYCHIPST

泰迪斯电子

Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 2.0A

Reverse Voltage 20 to 100V Forward Current 2.0A FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage highfrequency inverters, free wheeling,and polarity protection applications

LRC

乐山无线电

2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

GWSEMI

唯圣电子

SCHOTTKY DIODES REVERSE VOLT 20-100V FORWARD CURRENT 2A

DESCRIPTION The SM220 B~SM 2100 B are available in SMB p ackage FEATURES  For surface mount applications  Metal-Semiconductor Junction with Guarding  Epitaxial Construction  Metal-Semiconductor Junction with Guarding  Very Low forward voltage drop  High Current capability  For

AITSEMI

创瑞科技

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

TAYCHIPST

泰迪斯电子

Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 2.0A

Reverse Voltage 20 to100V Forward Current 2.0A FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications * Guardring fo

LRC

乐山无线电

2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 60 Volts CURRENT 2.0 Ampere FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

BYTES

2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

UNIOHM

厚声

Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 2.0A

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications * Guardring for over voltage protection * High temperature soldering

LRC

乐山无线电

Voltage 20 ~ 100 V 2.0 Amp Schottky Barrier Rectifiers

FEATURES ● Low forward surge current ● Ideal for surface mounted applications ● Low leakage current

SECOS

喜可士

2.0 AMP LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop

GWSEMI

唯圣电子

2.0 Amp Surface Mount Schottky Barrier Rectifiers

FEATURES • Batch process design, excellent power dissipation offers.better reverse leakage current and thermal resistance. • Low profile surface mounted application.in order to optimize board space. • Low power loss and low forward voltage drop • High surge, high current capability, and high e

SECOS

喜可士

High current capability

文件:492.1 Kbytes Page:2 Pages

DGNJDZ

南晶电子

20V N-Channel MOSFET

SEMIWAY

深美微

小信号场效应管

ETC

知名厂家

N-Channel Enhancement Mode MOSFET

文件:264.98 Kbytes Page:11 Pages

SINOPWER

大中集成电路

N-Channel 20 V (D-S) MOSFET

文件:1.05276 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

文件:264.98 Kbytes Page:11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:168.71 Kbytes Page:12 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:168.71 Kbytes Page:12 Pages

SINOPWER

大中集成电路

SSD (Solid-State Disk)

文件:1.36774 Mbytes Page:4 Pages

APACER

宇瞻

SSD (Solid-State Disk)

文件:1.46985 Mbytes Page:4 Pages

APACER

宇瞻

N-Channel Enhancement Mode MOSFET

文件:263.13 Kbytes Page:11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:263.13 Kbytes Page:11 Pages

SINOPWER

大中集成电路

SSD (Solid-State Disk)

文件:1.42242 Mbytes Page:4 Pages

APACER

宇瞻

Released from Engineering

文件:805.72 Kbytes Page:1 Pages

DBUNLIMITED

P-Channel Enhancement Mode MOSFET

文件:262.39 Kbytes Page:11 Pages

SINOPWER

大中集成电路

P-Channel Enhancement Mode MOSFET

文件:262.39 Kbytes Page:11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:171.92 Kbytes Page:12 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:171.92 Kbytes Page:12 Pages

SINOPWER

大中集成电路

Released from Engineering

文件:714.79 Kbytes Page:1 Pages

DBUNLIMITED

P-Channel Enhancement Mode MOSFET

文件:172.51 Kbytes Page:12 Pages

SINOPWER

大中集成电路

P-Channel Enhancement Mode MOSFET

文件:172.51 Kbytes Page:12 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:263.66 Kbytes Page:11 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:263.66 Kbytes Page:11 Pages

SINOPWER

大中集成电路

P-Channel Enhancement Mode MOSFET

文件:265.22 Kbytes Page:11 Pages

SINOPWER

大中集成电路

P-Channel Enhancement Mode MOSFET

文件:265.22 Kbytes Page:11 Pages

SINOPWER

大中集成电路

包装:散装 描述:DYNAMIC SPEAKER 音频设备, 产品 扬声器

DBUNLIMITED

N-Channel Enhancement Mode MOSFET

文件:268.87 Kbytes Page:12 Pages

SINOPWER

大中集成电路

N-Channel Enhancement Mode MOSFET

文件:268.87 Kbytes Page:12 Pages

SINOPWER

大中集成电路

P-Channel Enhancement Mode MOSFET

文件:264.24 Kbytes Page:11 Pages

SINOPWER

大中集成电路

P-Channel Enhancement Mode MOSFET

文件:264.24 Kbytes Page:11 Pages

SINOPWER

大中集成电路

Schottky Barrier Rectifiers

文件:179.65 Kbytes Page:4 Pages

LRC

乐山无线电

2.0 AMP Surface Mount Schottky Barrier Rectifiers

文件:230.79 Kbytes Page:2 Pages

SECOS

喜可士

flash memory card

文件:1.78301 Mbytes Page:4 Pages

APACER

宇瞻

2Amp Surface Mount Schottky Barrier Rectifiers

文件:298.29 Kbytes Page:2 Pages

SECOS

喜可士

2Amp Surface Mount Schottky Barrier Rectifiers

文件:298.29 Kbytes Page:2 Pages

SECOS

喜可士

SSD (Solid-State Disk)

文件:1.38656 Mbytes Page:4 Pages

APACER

宇瞻

SATA 3 (6Gb/s) interface, M.2 (NGFF) connector

文件:1.67865 Mbytes Page:5 Pages

APACER

宇瞻

Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

STMICROELECTRONICS

意法半导体

SM230产品属性

  • 类型

    描述

  • 型号

    SM230

  • 制造商

    DCCOM

  • 制造商全称

    Dc Components

  • 功能描述

    TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

更新时间:2026-1-27 22:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
茂达
25+
SOT-23
918000
明嘉莱只做原装正品现货
SINOPOWER/大中
23+
SOT-23
50000
只做原装正品
SKsemi/台灣SK
24+
SOT23-3
20000
十年沉淀唯有原装
SINOPOWER
2447+
SOT-23
9657
只做原装正品假一赔十为客户做到零风险!!
APM/大中积体
26+
TO-263
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
SINOPOWER
21+
8080
只做原装,质量保证
SINOPOWER/大中
2025+
SOT-23
5000
原装进口,免费送样品!
SEM
36118
SOT23-3
2015
专业代理MOS管,型号齐全,公司优势产品
茂达
ROHS+Original
SOT-23
25890
原装现货 库存特价/长期供应元器件代理经销
SUNMATE(森美特)
2019+ROHS
DO-213AB
66688
森美特高品质产品原装正品免费送样

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