N-Channel Enhancement Mode MOSFET

文件：171.92 Kbytes Page：12 Pages

N-Channel MOSFET

N-Channel MOSFET

N-Channel Enhancement Mode MOSFET

文件：171.92 Kbytes Page：12 Pages

Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)

Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist

GENERAL PURPOSE LOW-NOISE AMPLIFIER

Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power,

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Subminiature surface mount package. Applications ■ Battery management

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb