Chip LED

Features • Colorless transparency lens type • Compact type • Radiation size 1.3mm × 2.9mm • Surface mount lead configuration

高压线性驱动-新欧标

SM2333EB是一款无频闪、可满足新ERP标准的LED线性恒流控制芯片，内置过温保护功能和软启动功能，提升系统应用可靠性。 •本司专利的恒流控制技术\n•支持输入电压：230Vac\n•无频闪、可满足新ERP标准要求\n•芯片间输出电流偏差•无需磁性元器件可满足EMI应用\n•具有过温调节功能\n•具有软启动功能\n•封装形式：ESOP8;

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET

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N-Channel MOSFET

P-Channel Enhancement Mode MOSFET

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Colorless transparency lens type

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High Speed Switching Application

High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

丝印代码：E3***；P-Channel 12-V (D-S) MOSFET

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