1200 VOLT ULTRA FAST RECOVERY RECTIFIER

DESCRIPTION High Voltage, Low Leakage, Ultra Fast Rectifier KEY FEATURES • Available in axial leaded package • Ultra Fast Recovery Time • High Voltage • Metallurgical bonding • Voidless hermetically sealed glass package • TX, TXV and space level screening available Per In

1200 VOLT ULTRA FAST RECOVERY RECTIFIER

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET

N-Channel MOSFET

P-Channel Enhancement Mode MOSFET

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Silicon NPN Transistor High Speed Switch

Features: • High Collector–Base Voltage (VCBO) • Wide Area of Safety Operation (ASO) • Good Linearity of DC Current Gain (hFE)

GENERAL PURPOSE AMPLIFIER

Product Description The RF2337 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

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PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

文件：393.19 Kbytes Page：18 Pages

PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

文件：393.19 Kbytes Page：18 Pages