1200 VOLT ULTRA FAST RECOVERY RECTIFIER

DESCRIPTION High Voltage, Low Leakage, Ultra Fast Rectifier KEY FEATURES • Available in axial leaded package • Ultra Fast Recovery Time • High Voltage • Metallurgical bonding • Voidless hermetically sealed glass package • TX, TXV and space level screening available Per In

1200 VOLT ULTRA FAST RECOVERY RECTIFIER

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET

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N-Channel MOSFET

P-Channel Enhancement Mode MOSFET

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Silicon NPN Transistor High Speed Switch

Features: • High Collector–Base Voltage (VCBO) • Wide Area of Safety Operation (ASO) • Good Linearity of DC Current Gain (hFE)

GENERAL PURPOSE AMPLIFIER

Product Description The RF2337 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

文件：393.19 Kbytes Page：18 Pages

PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

文件：393.19 Kbytes Page：18 Pages

PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

文件：393.19 Kbytes Page：18 Pages