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SIHF30N60E价格
参考价格：￥19.7921
型号：SIHF30N60E-E3 品牌：Vishay 备注：这里有SIHF30N60E多少钱，2026年最近7天走势，今日出价，今日竞价，SIHF30N60E批发/采购报价，SIHF30N60E行情走势销售排行榜，SIHF30N60E报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHF30N60E | E Series Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • | VISHAYVishay Siliconix 威世威世科技公司 |   | |
SiHF30N60E | E Series Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHF30N60E | E Series Power MOSFET 文件：163.07 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SIHF30N60E | iscN-Channel MOSFET Transistor 文件：319.94 Kbytes Page：2 Pages | ISC 无锡固电 | | |
SIHF30N60E | E Series Power MOSFET 文件：184.07 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
E Series Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
E Series Power MOSFET 文件：163.07 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
E Series Power MOSFET 文件：184.07 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
E Series Power MOSFET 文件：163.07 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
E Series Power MOSFET 文件：163.07 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Speed IGBT High Speed IGBT Short Circuit SOA Capability Features ● International standard packages ● Short Circuit SOA capability ● High frequency IGBT ● New generation HDMOSTM process Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power supplies | IXYS 艾赛斯 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block | MOTOROLA 摩托罗拉 | | ||
Short Circuit Rated IGBT 文件：565.84 Kbytes Page：7 Pages | FAIRCHILD 仙童半导体 | | ||
Short Circuit Rated IGBT 文件：653.69 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | |
SIHF30N60E产品属性
- 类型
描述
- 型号
SIHF30N60E
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
E Series Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
VISHAY/威世 |
2023+ |
SMD |
92500 |
一级代理优势现货,全新正品直营店 |
|||
VISHAY |
23+ |
TO-220FP |
50000 |
原装正品 支持实单 |
|||
VISHAY/威世 |
25+ |
TO-220F |
32360 |
VISHAY/威世全新特价SIHF30N60E-GE3即刻询购立享优惠#长期有货 |
|||
威世 |
24+ |
TO-220F |
11000 |
假一赔百原装正品价格优势实单可谈 |
|||
VISHAY |
23+ |
TO220 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY/威世 |
22+ |
TO-220 |
20000 |
只做原装 品质保障 |
|||
VISHAY/威世 |
2447 |
TO-220-3 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
SIHF30N60E规格书下载地址
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2019-12-7
DdatasheetPDF页码索引
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