Short Circuit Rated IGBT

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Short Circuit Rated IGBT

分离，短路额定 IGBT，带二极管

安森美半导体的 RUFD 系列绝缘门极双极晶体管 (IGBT) 提供低导通和开关损耗以及短路耐受性。RUFD 系列适用于电机控制、不中断电源 (UPS) 和通用逆变器等短路耐受性为必需特性的应用。 •短路额定10us @ TC = 100°C，V GE = 15V\n•高速开关\n•低饱和电压： V CE(sat) = 2.2 V @ IC = 30A\n•高输入阻抗\n•CO-PAK、IGBT及FRD： t rr = 50ns（典型值）;

Short Circuit Rated IGBT

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封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 600V 48A 235W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 600V 48A 235W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Speed IGBT

High Speed IGBT Short Circuit SOA Capability Features ● International standard packages ● Short Circuit SOA capability ● High frequency IGBT ● New generation HDMOSTM process Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power supplies

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block