位置：首页 > IC中文资料第2610页 > MGW30N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MGW30N60 | Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re | Motorola 摩托罗拉 |   | |
MGW30N60 | Insulated Gate Bipolar Transistor | ETC 知名厂家 | ETC | |
BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris | Bourns 伯恩斯 | | ||
Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode 文件：1.9827 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
ACTIVE / SYNCHRONOUS RECTIFIER 文件：672.35 Kbytes Page：15 Pages | DIODES 美台半导体 | | ||
N-Channel Enhancement Mode MOSFET 文件：281.61 Kbytes Page：4 Pages | DACO 罡境电子 | | ||
N-Channel Enhancement Mode MOSFET 文件：264.01 Kbytes Page：4 Pages | DACO 罡境电子 | |
MGW30N60产品属性
- 类型
描述
- 型号
MGW30N60
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
25+23+ |
TO247 |
36838 |
绝对原装正品全新进口深圳现货 |
|||
COSEL |
23+ |
SIP |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
mot |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
MOTOROLA/摩托罗拉 |
22+ |
TO247 |
12245 |
现货,原厂原装假一罚十! |
|||
COSEL |
25+ |
SIP |
55000 |
原厂渠道原装正品假一赔十 |
|||
MOTOROLA/摩托罗拉 |
24+ |
TO247 |
54000 |
郑重承诺只做原装进口现货 |
|||
ON |
24+ |
90000 |
|||||
MOTOROLA/摩托罗拉 |
24+ |
TO247 |
9600 |
原装现货,优势供应,支持实单! |
|||
ON |
25+ |
TO |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
MOTOROLA/摩托罗拉 |
25+ |
TO247 |
6000 |
只做原装 |
MGW30N60芯片相关品牌
MGW30N60规格书下载地址
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DdatasheetPDF页码索引
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