Insulated Gate Bipolar Transistor with Anti-Parallel Diode

N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.

• Industry Standard High Power TO–264 Package (TO–3PBL)

• High Speed Eoff: 60 μJ per Amp typical at 125°C

• High Short Circuit Capability – 10 μs minimum

• Soft Recovery Free Wheeling Diode is included in the package

• Robust High Voltage Termination

• Robust RBSOA