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SIA价格
参考价格:¥1.2588
型号:SIA400EDJ-T1-GE3 品牌:Vishay 备注:这里有SIA多少钱,2024年最近7天走势,今日出价,今日竞价,SIA批发/采购报价,SIA行情走势销售排行榜,SIA报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®GenIVpowerMOSFET •TunedforthelowestRDS-Qoss •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Primarysideswitch •DC/DCconverter •Motordriveswitch •Boostconverter | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea •TypicalESDPerformance2500VHBM •100RgandUISTested •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •LoadSwit | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea •TypicalESDPerformance2500VHBM •100RgandUISTested •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •LoadSwit | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 12-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableDe | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 12-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableDe | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 30 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableApplications •DC/DCConverter | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 30 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableApplications •DC/DCConverter | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20-V (D-S) MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance APPLICATIONS •LoadSwitch,PASwitchandBatterySwitchforPortableDevices | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 12-V (D-S) MOSFET DESCRIPTION Theattachedspicemodeldescribesthetypicalelectricalcharacteristicsofthep-channelverticalDMOS.Thesubcircuitmodelisextractedandoptimizedoverthe−55to125°Ctemperaturerangesunderthepulsed0-Vto5-Vgatedrive.Thesaturatedoutputimpedanceisbestfitatthe | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 12-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance •Materialcategorization: Fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •LoadSwitch,PASwitchandBatterySwitchforPorta | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 12-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance •Materialcategorization: Fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •LoadSwitch,PASwitchandBatterySwitchforPorta | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual N-Channel 8-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •LoadSwitchforPortableApplications | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20-V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •NewthermallyenhancedPowerPAK®SC-70package -Smallfootprintarea -Lowon-resistance •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Loadswitch,PAswitchandbatteryswitchforpo | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •DC/DCConverters •Full-BridgeConverters •ForPowerBricksandPOLPower | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Evaluating the AD74115H Single-Channel, Software Configurable Input and Output with HART Modem GENERALDESCRIPTION TheEVAL-AD74115H-ARDZisafullyfeaturedevaluationboard thatcanbeusedtoevaluatethefeaturesoftheAD74115Hina fullsystemsolutionwherepowerandisolationareprovidedbythe ADP1034.TheAD74115Hisasingle-channel,softwareconfigurable, inputandoutput | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
P-Channel 8-V (D-S) MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance APPLICATIONS •LoadSwitch,PASwitchforPortableDevices | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 8-V (D-S) MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance APPLICATIONS •LoadSwitch,PASwitchforPortableDevices | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch,PASwitchandBatterySwitchfor | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •LoadSwitchforPortableDevices •BuckConvert | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®GenIIIp-channelpowerMOSFET •RDS(on)ratingatVGS=-1.8V •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Batterymanagementinmobiledevices •Batteryswitch •Loadswitch | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •100Rgtested •ThermallyenhancedPowerPAK®SC-70package -Smallfootprintarea -Lowon-resistance •TypicalESDprotection:3000V(HBM) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •NewthermallyenhancedPowerPAK® SC-70package -Smallfootprintarea -Ultra-thin0.6mmheight -Lowon-resistance •100Rgtested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Lo | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •NewthermallyenhancedPowerPAK® SC-70package -Smallfootprintarea -Ultra-thin0.6mmheight -Lowon-resistance •100Rgtested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Lo | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 20-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •ThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •LoadSwitch | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual 3 A, 20 V Synchronous Step-Down Regulator with Integrated High-Side MOSFET GENERALDESCRIPTION TheADP2323isafullfeatured,dualoutput,step-downdc-to-dcregulatorbasedoncurrent-modearchitecture.TheADP2323integratestwohigh-sidepowerMOSFETsandtwolow-sidedriversfortheexternalN-channelMOSFETs.Thetwopulse-widthmodulation(PWM)channelscanbec | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
Dual 5 A, 20 V Synchronous Step-Down GENERALDESCRIPTION TheADP2325isafullfeatured,dualoutput,step-downdc-to-dcregulatorbasedonacurrentmodearchitecture.TheADP2325integratestwohigh-sidepowerMOSFETsandtwolow-sidedriversfortheexternalN-channelMOSFETs.Thetwopulse-widthmodulation(PWM)channelscanbe | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
20 V, 6 A Synchronous Step-Down GENERALDESCRIPTION TheADP2381isacurrentmodecontrol,synchronous,stepdown,dc-to-dcregulator.Itintegratesa44mΩpowerMOSFETandalow-sidedrivertoprovideahighefficiencysolution.TheADP2381runsfromaninputvoltageof4.5Vto20Vandcandeliver6Aofoutputcurrent.T | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
N-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedPowerPAK®SC-70package -Smallfootprintarea -Ultra-thin0.6mmheight •100Rgtested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Loadswitch •DC/DCconversion | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 20-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •ThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •LoadSwitch | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20-V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •NewthermallyenhancedPowerPAK®SC-70package -Smallfootprintarea -Lowon-resistance •100Rgtested •BuiltinESDprotectionwithZenerdiode •TypicalESDperformance:1800V •Materialcategorization:fordefinitionsofcompliancepl | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20-V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •NewthermallyenhancedPowerPAK®SC-70package -Smallfootprintarea -Lowon-resistance •100Rgtested •BuiltinESDprotectionwithZenerdiode •TypicalESDperformance:1800V •Materialcategorization:fordefinitionsofcompliancepl | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 8 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedPowerPAK®SC-70package -Smallfootprintarea •100Rgtested •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Loadswitchforportableapplicationssuchassmartphones | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 8 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedPowerPAK®SC-70package -Smallfootprintarea •100Rgtested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Loadswitchforportableapplications suchassmartphones | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 8 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedPowerPAK®SC-70package -Smallfootprintarea •100Rgtested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Loadswitchforportableapplications suchassmartphones | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •100Rgtested •ThermallyenhancedPowerPAK®SC-70 package -Smallfootprintarea -Lowon-resistance •TypicalESDprotection:3000V(HBM) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 40 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •ThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PortableandConsumerDevic | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 40 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •ThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PortableandConsumerDevic | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel 30 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedPowerPAKSC-70package -Smallfootprintarea -Lowon-resistance •100Rgtested •BuiltinESDprotectionwithZenerdiode •TypicalESDperformance:2000V •Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedPowerPAKSC-70package -Smallfootprintarea -Lowon-resistance •100Rgtested •BuiltinESDprotectionwithZenerdiode •TypicalESDperformance:2000V •Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIVp-channelpowerMOSFET •ThermallyenhancedPowerPAK®SC-70package •ProvidesexcellentRDS-QgFigure-of-Merit(FOM) forswitchingapplications •100Rgtested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPL | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N- and P-Channel 20-V (D-S) MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFETs •NewThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance APPLICATIONS •PortableDevices | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N- and P-Channel 20-V (D-S) MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFETs •NewThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance APPLICATIONS •PortableDevices | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N- and P-Channel 12-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFETs •NewThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableDevices | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | |||
N- and P-Channel 12-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFETs •ThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance •Materialcategorization:Fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •LoadSwitchforPortableDevices | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N- and P-Channel 12-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFETs •ThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance •Materialcategorization:Fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •LoadSwitchforPortableDevices | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N- and P-Channel 20-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFETs •NewThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableDevices | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | |||
N- and P-Channel 20-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFETs •TypicalESDProtection:N-Channel2000V P-Channel1000V •100RgTested •Materialcategorization: Fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N- and P-Channel 20-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFETs •TypicalESDProtection:N-Channel2000V P-Channel1000V •100RgTested •Materialcategorization: Fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES •LITTLEFOOT®plusSchottkypowerMOSFET •NewthermallyenhancedPowerPAK®SC-70package -Smallfootprintarea -Lowon-resistance -Thin0.75mmprofile •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •C | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedThinPowerPAK®SC-70 package -Smallfootprintarea -Lowon-resistance •TypicalESDprotection:1500VHBM •Highspeedswitching •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLI | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedThinPowerPAK®SC-70 package -Smallfootprintarea -Lowon-resistance •TypicalESDprotection:1500VHBM •Highspeedswitching •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLI | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedThinPowerPAK®SC-70 package -Smallfootprintarea -Lowon-resistance •TypicalESDprotection:1500VHBM •Highspeedswitching •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLI | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •ThermallyenhancedThinPowerPAK®SC-70 package -Smallfootprintarea -Lowon-resistance •TypicalESDprotection:1500VHBM •Highspeedswitching •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLI | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual P-Channel 20-V (D-S) MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance APPLICATIONS •LoadSwitch,PASwitchandBatterySwitchforPortableDevices | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual P-Channel 12-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 •TrenchFET®PowerMOSFET •NewThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance APPLICATIONS •LoadSwitch,PASwitchandBatterySwitchforPortableDevices | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •ThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance •TypicalESDProtection:2500V •100RgTested •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Charg | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual P-Channel 20 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •ThermallyEnhancedPowerPAK®SC-70Package -SmallFootprintArea -LowOn-Resistance •TypicalESDProtection:2500V •100RgTested •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Charg | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIIIpowerMOSFET •ThermallyenhancedPowerPAK® SC-70package -Smallfootprintarea -Lowon-resistance •100Rgtested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Loadswitchandbatterymana | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Dual P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET®GenIIIpowerMOSFET •ThermallyenhancedPowerPAK® SC-70package -Smallfootprintarea -Lowon-resistance •100Rgtested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Loadswitchandbatterymana | VishayVishay Siliconix 威世科技威世科技半导体 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
1844+ |
DIP-16 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY-威世 |
24+25+/26+27+ |
SC-70-6 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SAMSANG |
19+ |
DIP |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
|||
VISHAY |
24+ |
PPAK |
6603 |
假一赔百原装正品价格优势实单可谈 |
|||
VISHAY |
PPAK |
30000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
VISHAY |
24+ |
PPAK |
10000 |
原装正品 |
|||
3000 |
自己现货 |
||||||
Vishay Siliconix |
24+ |
PowerPAK? SC-70-6 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
SAMSUNG/三星 |
1801+ |
DIP |
5960 |
原装正品-现货-绝对有货-实单价可谈 |
|||
Vishay Siliconix |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
SIA规格书下载地址
SIA参数引脚图相关
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- sst25vf040
- sr2m
- spwm
- spice模型
- spd
- sp3232
- soc
- smd
- sl11
- sk100
- sja1000
- sig
- SiC531A
- SIC531
- SIC530
- SIC521A
- SIC521
- SIC46X
- SiC464
- SiC463
- SIC462
- SIC437
- SIC431
- SIC424
- SIC417
- SIC414
- SIC413
- SIC403A
- SIC403
- SIC402A
- SIC401A
- SIC401
- SIA431DJ-T1-GE3
- SIA430DJ-T1-GE3
- SIA429DJT-T1-GE3
- SIA427DJ-T1-GE3
- SIA427ADJ-T1-GE3/BKN
- SIA427ADJ-T1-GE3
- SIA426DJ-T1-GE3
- SIA425EDJ-T1-GE3
- SIA421DJ-T1-GE3
- SIA418DJ-T1-GE3
- SIA417DJ-T1-GE3
- SIA416DJ-T1-GE3
- SIA415DJ-T1-GE3
- SIA414DJ-T1-GE3-CUTTAPE
- SIA414DJ-T1-GE3
- SIA411DJ-T1-GE3
- SIA408DJ-T1-GE3-CUTTAPE
- SIA408DJ-T1-GE3
- SIA406DJ-T1-GE3
- SIA400EDJ-T1-GE3
- SI9988
- SI9987
- SI9986
- SI9979
- SI9978
- SI9976DY
- SI9976
- SI9961A
- SI9961
- SI9945BDY-T1-GE3
- SI9945BDY-T1-G>
- SI9936DY
- SI9936BDY-T1-GE3
- SI9936BDY-T1-E3
- SI9933CDY-T1-GE3-CUTTAPE
- SI9933CDY-T1-GE3
- SI9933CDY-T1-E3
- SI9926CDY-T1-GE3-CUTTAPE
- SI9926CDY-T1-GE3
- SI9926CDY-T1-G>
- SI9926CDY-T1-E3
- SI9926
- SI9925
- SI9913
- SI9912
- SI9910DY-T1-E3
- SI9910DY-E3
- SI9910
- SI9750
- SI97406
- SI9731
- SI9730
- SI9717
- SI9712
- SI9711
- SI9706DY-E3
- SI9435BDY-T1-GE3
- SI9435BDY-T1-E3-CUTTAPE
- SI9435BDY-T1-E3
- SI9434BDY-T1-E3
SIA数据表相关新闻
SIA519EDJ-T1-GE3
优势渠道
2023-2-14SI9945BDY-T1-GE3原装现货
瀚佳科技(深圳)有限公司专业进口电子元器件代理商
2020-7-30SIA413DJ-T1-GE3原装现货
瀚佳科技(深圳)有限公司专业进口电子元器件代理商
2020-7-30SIA421DJ-T1-GE3原装现货
瀚佳科技(深圳)有限公司专业进口电子元器件代理商
2020-7-30SI9987-缓冲H桥
该Si9987是一个综合的,缓冲的H-桥与TTL兼容的输入和提供持续的能力1.0一个在VDD=5.0V的(室温)的交换速率高达至500千赫。内部逻辑防止上下产出任半同时被开启桥。独特允许两个输出输入代码将被迫低(制动)或...强制为高阻抗的水平。该Si9987是提供8引脚SOIC封装,指定操作过电压范围为3.8V至13.2V,和在0至70摄氏度(丙后缀)和商业温度范围鈥到85℃(D后缀)。特点1.0的H-桥500kHz的开关频率贯通有限公司TTL兼容输入3.8至13
2013-2-7Si9976-N沟道半桥式驱动器
描述该Si9976DY是一个N沟道集成的驱动器MOSFET的半桥。施密特触发器输入提供逻辑信号兼容性和滞后的噪音增加免疫力。内部低电压稳压器允许器件对供电系统从20到40五,直接供应两个半桥式N通道闸直接驱动低阻抗输出。另外一个外部电容允许将这两个级别的电源内部电路...和逻辑信号半桥高端N-通道闸驱动器。内部电荷泵代替泄漏电流损失在高侧驱动器电路,以提供“静态“(DC)的操作在任何输出条件。保护功能包括一欠压锁定,交叉传导预防的逻辑,短路显示器。该Si9976DY是可用14引脚SOIC(表面贴装)封装,规定工作在工业(-40至85°C)温度范围。...
2013-2-7
DdatasheetPDF页码索引
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