N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET Power MOSFET • 100 Rg Tested APPLICATIONS • Battery Switch • Load Switch

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET Power MOSFET • 100 Rg Tested APPLICATIONS • Battery Switch • Load Switch

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET Power MOSFET • 100 Rg Tested APPLICATIONS • Battery Switch • Load Switch

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET Power MOSFET • 100 Rg Tested APPLICATIONS • Battery Switch • Load Switch

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

HEXFET Power MOSFET

Description This N-channel HEXFET® Power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-

N-channel TrenchMOS logic level FET

N-Channel 30-V (D-S) MOSFET

FEATURES   
TrenchFETPower MOSFET

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4410DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertor

Single N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) ● RDS(ON)

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) ● RDS(ON)

HEXFET짰Power MOSFET

Description This N-channel HEXFET® Power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO-

N-Channel MOSFET

Description This N-channel HEXFET® Power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO-

N-Channel 30-V (D-S) MOSFET

FEATURES   
TrenchFETPower MOSFET

N-Channel 30-V (D-S) MOSFET

FEATURES   
TrenchFETPower MOSFET

N-Channel 30-V (D-S) MOSFET

FEATURES   
TrenchFETPower MOSFET

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

N-Channel 30-V (D-S) MOSFET

FEATURES   
TrenchFETPower MOSFET

N-Channel MOSFET

Description This N-channel HEXFET® Power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO-

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

Simple Drive Requirements

文件：124.61 Kbytes Page：8 Pages

Simple Drive Requirements

文件：124.61 Kbytes Page：8 Pages

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

HEYConnect™ Terminal Bushings

文件：93.68 Kbytes Page：1 Pages

N-Channel 20V (D-S) MOSFET

文件：1.01333 Mbytes Page：9 Pages

N-Channel Enhancement Mode MOSFET

文件：523.71 Kbytes Page：4 Pages

N-Channel 20V (D-S) MOSFET

文件：1.00712 Mbytes Page：9 Pages