Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：790.17 Kbytes Page：11 Pages

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：790.17 Kbytes Page：11 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 12A 68W TO263-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

IGBT with integrated diode in packages offering space saving advantage

文件：1.92413 Mbytes Page：16 Pages

IGBT with integrated diode in packages offering space saving advantage

文件：1.74081 Mbytes Page：16 Pages

POWER FIELD EFFECT TRANSISTOR

文件：191.5 Kbytes Page：6 Pages