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SFT1晶体管资料
SFT101别名：SFT101三极管、SFT101晶体管、SFT101晶体三极管
SFT101生产厂家：
SFT101制作材料：Ge-PNP
SFT101性质：
SFT101封装形式：
SFT101极限工作电压：24V
SFT101最大电流允许值：0.1A
SFT101最大工作频率：<1MHZ或未知
SFT101引脚数：
SFT101最大耗散功率：0.1W
SFT101放大倍数：
SFT101图片代号：NO
SFT101vtest：24
SFT101htest：999900
- SFT101atest：0.1
SFT101wtest：0.1
SFT101代换 SFT101用什么型号代替：3AX51A,
SFT1价格
参考价格：￥2.3576
型号：SFT1341-C-TL-E 品牌：ON 备注：这里有SFT1多少钱，2025年最近7天走势，今日出价，今日竞价，SFT1批发/采购报价，SFT1行情走势销售排行榜，SFT1报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SFT1 | SUPER FAST RECTIFIER DIODES FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Super fast recovery time * Pb / RoHS Free | SYNSEMI |   | |
SFT1 | SUPER FAST RECTIFIER DIODES 文件：39.91 Kbytes Page：2 Pages | EIC | | |
SFT1 | SUPER FAST RECTIFIER DIODES 文件：42.3 Kbytes Page：2 Pages | EIC | | |
SFT1 | Rectifiers: Super Fast Recovery | SYNSEMI | | |
20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR Features: • BVCEO 350 Volts • Low Saturation Voltage • 200oC Operating Temperature • Hermetically Sealed, Isolated Package • TX, TXV, S-Level Screening Available. Consult Factory. Application Notes: SFT10000 Darlington Transistor is a direct replacement of Motorola MJ1000. It is designed fo | SSDI | | ||
20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR Features: • BVCEO 350 Volts • Low Saturation Voltage • 200oC Operating Temperature • Hermetically Sealed, Isolated Package • TX, TXV, S-Level Screening Available. Consult Factory. Application Notes: SFT10000 Darlington Transistor is a direct replacement of Motorola MJ1000. It is designed fo | SSDI | | ||
20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR Features: • BVCEO 350 Volts • Low Saturation Voltage • 200oC Operating Temperature • Hermetically Sealed, Isolated Package • TX, TXV, S-Level Screening Available. Consult Factory. Application Notes: SFT10000 Darlington Transistor is a direct replacement of Motorola MJ1000. It is designed fo | SSDI | | ||
100AMP HIGH SPEED PNP TRANSISTOR 250 VOLTS 100AMP HIGH SPEED PNP TRANSISTOR 250 VOLTS | SSDI | | ||
100 AMP HIGH SPEED NPN TRANSISTOR 250 VOLTS
| SSDI | | ||
100 AMP HIGH SPEED NPN TRANSISTOR 250 VOLTS
| SSDI | | ||
100 amp HIGH ENERGY NPN TRANSISTORS
| SSDI | | ||
100 amp HIGH ENERGY NPN TRANSISTORS
| SSDI | | ||
100 amp HIGH ENERGY NPN TRANSISTORS
| SSDI | | ||
100 amp HIGH ENERGY NPN TRANSISTORS 350 VOLTS
| SSDI | | ||
100 amp HIGH ENERGY NPN TRANSISTORS 350 VOLTS
| SSDI | | ||
100 amp HIGH ENERGY NPN TRANSISTORS 350 VOLTS
| SSDI | | ||
PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications PNP Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converters, relay drivers, lamp drivers, motor | SANYO 三洋 | | ||
PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications PNP Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converters, relay drivers, lamp drivers, motor | SANYO 三洋 | | ||
2 AMP 500 VOLTS PNP TRANSISTOR FEATURES: • BVCEO 400V. • Fast Switching. • High Frequency. • Low Saturation Voltage. • 200oC Operating, Gold Eutectic Die Attach. • Designed for Complementary Use with SFT6800. | SSDI | | ||
2 AMP 500 VOLTS PNP TRANSISTOR FEATURES: • BVCEO 400V. • Fast Switching. • High Frequency. • Low Saturation Voltage. • 200oC Operating, Gold Eutectic Die Attach. • Designed for Complementary Use with SFT6800. | SSDI | | ||
NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers | SANYO 三洋 | | ||
NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, mot | SANYO 三洋 | | ||
Bipolar Transistor Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive | ONSEMI 安森美半导体 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) • Fast -Switching speed • High allowable power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • DC/DC converter • | ISC 无锡固电 | | ||
Bipolar Transistor Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Motor drive application. • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
General-Purpose Switching Device Applications Features • 1.8V drive. | SANYO 三洋 | | ||
Single P-Channel Power MOSFET Features • Low On-Resistance • High Speed Switching • Low Gate Charge • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
Single P-Channel Power MOSFET Features • Low On-Resistance • High Speed Switching • Low Gate Charge • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
Single P-Channel Power MOSFET Features • Low On-Resistance • High Speed Switching • Low Gate Charge • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
Single P-Channel Power MOSFET Features • Low On-Resistance • High Speed Switching • Low Gate Charge • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
Single P-Channel Power MOSFET Features • Low On-Resistance • High Speed Switching • Low Gate Charge • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Motor drive application. • 4V drive. | SANYO 三洋 | | ||
Power MOSFET Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
P-Channel Power MOSFET ??0V, ??2A, 62m, Single TP/TP-FA Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -60V, ID= -50A RDS(ON) | Bychip 百域芯 | | ||
P-Channel Power MOSFET ??0V, ??2A, 62m, Single TP/TP-FA Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
Power MOSFET Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
P-Channel Power MOSFET ??0V, ??2A, 62m, Single TP/TP-FA Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
Power MOSFET Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
Power MOSFET Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
Power MOSFET Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance | ONSEMI 安森美半导体 | | ||
Power MOSFET 100V, 11A, 275m, P-Channel Single TP/TP-FA Power MOSFET –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • ON-resistance RDS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -100V, ID= -13A RDS(ON) | Bychip 百域芯 | | ||
Power MOSFET Power MOSFET –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • ON-resistance RDS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
Power MOSFET Power MOSFET –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • ON-resistance RDS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
Power MOSFET 100V, 11A, 275m, P-Channel Single TP/TP-FA Power MOSFET –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • ON-resistance RDS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
Power MOSFET Power MOSFET –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • ON-resistance RDS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
Power MOSFET 100V, 11A, 275m, P-Channel Single TP/TP-FA Power MOSFET –100V, –11A, 275mΩ, P-Channel Single TP/TP-FA Features • ON-resistance RDS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input Capacitance Ciss=590pF(typ.) • 4.5V drive • Halogen free compliance | SANYO 三洋 | | ||
P-Channel Power MOSFET 40V, 19A, 59m, Single TP/TP-FA Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input Capacitance Ciss=590pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
P-Channel Power MOSFET 40V, 19A, 59m, Single TP/TP-FA Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input Capacitance Ciss=590pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
P-Channel Power MOSFET 40V, 19A, 59m, Single TP/TP-FA Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input Capacitance Ciss=590pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Motor drive application. • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Motor drive application. • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Motor drive application. • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Motor drive application. • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. | SANYO 三洋 | |
SFT1产品属性
- 类型
描述
- 型号
SFT1
- 制造商
SYNSEMI
- 制造商全称
SYNSEMI
- 功能描述
SUPER FAST RECTIFIER DIODES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/MOTO |
23+ |
CAN to-39 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
三年内 |
1983 |
只做原装正品 |
|||||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
23+ |
TO-252 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
ON(安森美) |
2447 |
TO-252-3 |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/安森美 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON(安森美) |
25+ |
标准封装 |
8000 |
原装，请咨询 |
|||
ON Semiconductor |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
VBsemi |
24+ |
TO252 |
18000 |
假一赔百原装正品价格优势实单可谈 |
SFT1规格书下载地址
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SFT1数据表相关新闻
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2024-1-12SFV8R-3STBE1HLF
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2021-6-23SFXG50UZ502深圳市光华微科技有限公司18138231376
联系人：刘冬英 公司电话：0755-83203002 手机：18138231376 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-5-6SG1503T-精密2.5伏参考...
描述 这种单片集成电路是一个完全独立的精密电压参考发生器，内部装饰为± 1％的准确度。需要较少比静态电流为2mA，这种装置可以提供10mA的过剩的总负载和线路引起的误差小于0.5％。另外本计画为电压精度，实现了内部修整温度系数的输出电压通常为10 ppm的/° C的因此，这些提法应用关键仪器和D很好的选择到一个转换器系统。该SG1503规定工作在整个军事环境温度范围-55 ° C至125 ° C，而在SG2503是专为-25 ° C至85 ° C和0℃的商业应用SG3503至70℃ 特征 ·输出电压调整到±1％ ·输入电压范围
2013-3-15
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