NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, mot

Bipolar Transistor

Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) • Fast -Switching speed • High allowable power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • DC/DC converter •

Bipolar Transistor, 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA

SFT1202 is Bipolar Transistor, 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA for High-Voltage Switching Applications. • Adoption of FBET, MBIT process\n• Large current capacity\n• Low collector-to-emitter saturation voltage\n• High-speed switching\n• High allowable power dissipation;

Bipolar Transistor

Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive

Bipolar Transistor

Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 150V 2A TP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 150V 2A TPFA 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Transmissive Optical Sensor with Phototransistor Output

Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Features ● Compact construction ● No setting efforts ● Polyc

Battery power unit

文件：123.15 Kbytes Page：24 Pages

Battery power unit

文件：123.15 Kbytes Page：24 Pages