General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Motor drive application. • Low ON-resistance. • 4V drive.

General-Purpose Switching Device Applications

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -11A@ TC=25℃ · Drain Source Voltage -VDSS= -35V(Min) · Static Drain-Source On-Resistance -RDS(on) = 77mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -11A@ TC=25℃ · Drain Source Voltage -VDSS= -35V(Min) · Static Drain-Source On-Resistance -RDS(on) = 77mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — Hi

MEDIUM POWER AMPLIFIER GaAs MMIC

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