NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

60-Bit VFD Tube Driver with Digital Dimming and PWM Conversion Function

GENERAL DESCRIPTION The MSC1201-xx is a 1/2 duty vacuum fluorescent display tube driver implemented in Bi-CMOS technology. This LSI consists of 64-bit shift registers, 64 latches, PWM conversion circuit, a digital dimming circuit, 30-segment driver and 2-grid driver. As the MSC1201-xx has both a

60-Bit VFD Tube Driver with Digital Dimming and PWM Conversion Function

GENERAL DESCRIPTION The MSC1201-xx is a 1/2 duty vacuum fluorescent display tube driver implemented in Bi-CMOS technology. This LSI consists of 64-bit shift registers, 64 latches, PWM conversion circuit, a digital dimming circuit, 30-segment driver and 2-grid driver. As the MSC1201-xx has both a

Video Amplifier System

文件：374.57 Kbytes Page：16 Pages

Video Amplifier System

文件：374.57 Kbytes Page：16 Pages