General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive.

N-Channel Power MOSFET 500V, 2A, 4.9, Single TP/TP-FA

N-Channel Power MOSFET 500V, 2A, 4.9Ω, Single TP/TP-FA Features • ON-resistance • Protection diode in • 4V drive

General-Purpose Switching Device Applications

N-Channel 650 V (D-S) MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.9Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.9Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel Power MOSFET 500V, 2A, 4.9, Single TP/TP-FA

N-Channel Power MOSFET 500V, 2A, 4.9Ω, Single TP/TP-FA Features • ON-resistance • Protection diode in • 4V drive

MOSFET N-CH 500V 2A TP-FA

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：MOSFET N-CH 500V 2A TP-FA 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel Power MOSFET 500V, 2A, 4.9, Single TP/TP-FA

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING HAMMER DRIVER, PULSE MOTOR DRIVER)

SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VCEO=-120V (Min.) • Complementary to KTD1413.

5-Dot Red/Green LED Level Meter

SMALL SIGNAL GaAs FET?

DESCRIPTION The MGF1423B, low-noise GaAs FET with an N-channel Schottky gate, is designed for use in S to Ku band amplifiers. FEATURES ● High linear power gain GLP = 11 dB (TYP.) @ f = 12 GHz ● High output power at 1 dB gain compression P1dB = 13dBm (TYP.) @ f = 12 GHz ● High reliabil

RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS

DESCRIPTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424. ■

HIGH PERFORMANCE 4K X 4 CMOS STATIC RAM

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