SILICON RECTIFIER DIODES

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SILICON RECTIFIER DIODES

N-Channel Trench MOSFET

Features Advanced trench cell design Low Thermal Resistance VDSS≥100V RDS(ON)≦4.1mΩ@VGS=10V

N-Channel Super Trench Power MOSFET

Description The RM110N150T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

N-Channel Enhancement Mode Power MOSFET

Description The RM110N82T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)

N-Channel Trench MOSFET

Features High Efficiency Low Dense Cell Design VDSS≥90V RDS(ON)≦4.7mΩ@VGS=10V improved dv/dt capability Reliable and Rugged Application Halogen-free Networking, Load Swtich LED lighting , Quick Charger

N-Channel Enhancement Mode Power MOSFET

Description The RM115N65T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =115A RDS(ON)

Rectifier Diodes

Description The EM2 is a 400 V, 1.2 A general-purpose rectifier diode with low loss characteristics. This rectifier diode is for a commercial power supply. Features ● VRM------------------------------------------------------ 400 V ● IF(AV)-----------------------------------------------------

PLASTIC SILICON RECTIFIER

FEATURES ◇ Low cost ◇ Diffused junction ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

Silicon Diode

Scope The present specifications shall apply to an RM11A. Outline Type Silicon Diode Structure Resin Molded Applications Commercial Frequency Rectification Flammability UL94V-0 (Equivalent)

Rectifier Diodes

Description The EM2 is a 400 V, 1.2 A general-purpose rectifier diode with low loss characteristics. This rectifier diode is for a commercial power supply. Features ● VRM------------------------------------------------------ 400 V ● IF(AV)-----------------------------------------------------

PLASTIC SILICON RECTIFIER

FEATURES ◇ Low cost ◇ Diffused junction ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

Rectifier Diodes

Rectifier Diodes

Rectifier Diodes

Description The EM2 is a 400 V, 1.2 A general-purpose rectifier diode with low loss characteristics. This rectifier diode is for a commercial power supply. Features ● VRM------------------------------------------------------ 400 V ● IF(AV)-----------------------------------------------------

Silicon Diode

Rectifier Diodes

PLASTIC SILICON RECTIFIER

FEATURES ◇ Low cost ◇ Diffused junction ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

MOSFET

N-Channel Super Trench Power MOSFET

文件：316.45 Kbytes Page：7 Pages

MOSFET

N-Channel Super Trench Power MOSFET

文件：279.79 Kbytes Page：7 Pages

SILICON RECTIFIER DIODES

文件：39.49 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：48.14 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：48.14 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：48.14 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：39.49 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：48.14 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：39.49 Kbytes Page：2 Pages

Rectifier Diodes

文件：70.39 Kbytes Page：2 Pages

N-Channel Super Junction Power MOSFET

文件：589.84 Kbytes Page：8 Pages

N-Channel Super Junction Power MOSFET

文件：589.84 Kbytes Page：8 Pages

N-Channel Super Junction Power MOSFET

文件：589.84 Kbytes Page：8 Pages