位置：首页 > IC中文资料第2433页 > RM11
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RM11 | SILICON RECTIFIER DIODES 文件：39.49 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors |  |   |
RM11 | 包装：袋 描述：TOOL REPLCMT BLADES 工具 配件 | BELDENBelden Inc. 百通电缆设计科技有限公司 |  | |
N-Channel Trench MOSFET Features Advancedtrenchcelldesign LowThermalResistance VDSS≥100VRDS(ON)≦4.1mΩ@VGS=10V | RECTRON Rectron Semiconductor |  | | |
N-Channel Super Trench Power MOSFET Description TheRM110N150T2usesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealforhigh | RECTRON Rectron Semiconductor | | | |
N-Channel Enhancement Mode Power MOSFET Description TheRM110N82T2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=82V,ID=110A RDS(ON) | RECTRON Rectron Semiconductor | | | |
N-Channel Trench MOSFET Features HighEfficiency LowDenseCellDesign VDSS≥90V RDS(ON)≦4.7mΩ@VGS=10V improveddv/dtcapability ReliableandRugged Application Halogen-free Networking,LoadSwtich LEDlighting,QuickCharger | RECTRON Rectron Semiconductor | | | |
N-Channel Enhancement Mode Power MOSFET Description TheRM115N65T2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeature VDS=65V,ID=115A RDS(ON) | RECTRON Rectron Semiconductor | | | |
Rectifier Diodes Description TheEM2isa400V,1.2Ageneral-purposerectifier diodewithlowlosscharacteristics.Thisrectifierdiode isforacommercialpowersupply. Features ●VRM------------------------------------------------------400V ●IF(AV)----------------------------------------------------- | SankenSanken electric 三垦三垦电气株式会社 |  | | |
PLASTIC SILICON RECTIFIER FEATURES ◇Lowcost ◇Diffusedjunction ◇Lowleakage ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇EasilycleanedwitnFreon,Alcohol,lsopropanolandsimilarsolvents ◇TheplasticmaterialcarriesU/Lrecognition94V-0 | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | | |
Silicon Diode Scope ThepresentspecificationsshallapplytoanRM11A. Outline TypeSiliconDiode StructureResinMolded ApplicationsCommercialFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Rectifier Diodes Description TheEM2isa400V,1.2Ageneral-purposerectifier diodewithlowlosscharacteristics.Thisrectifierdiode isforacommercialpowersupply. Features ●VRM------------------------------------------------------400V ●IF(AV)----------------------------------------------------- | SankenSanken electric 三垦三垦电气株式会社 | | | |
PLASTIC SILICON RECTIFIER FEATURES ◇Lowcost ◇Diffusedjunction ◇Lowleakage ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇EasilycleanedwitnFreon,Alcohol,lsopropanolandsimilarsolvents ◇TheplasticmaterialcarriesU/Lrecognition94V-0 | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | | | |
Rectifier Diodes RectifierDiodes | SankenSanken electric 三垦三垦电气株式会社 | | | |
Rectifier Diodes Description TheEM2isa400V,1.2Ageneral-purposerectifier diodewithlowlosscharacteristics.Thisrectifierdiode isforacommercialpowersupply. Features ●VRM------------------------------------------------------400V ●IF(AV)----------------------------------------------------- | SankenSanken electric 三垦三垦电气株式会社 | | | |
Silicon Diode RectifierDiodes | SankenSanken electric 三垦三垦电气株式会社 | | | |
PLASTIC SILICON RECTIFIER FEATURES ◇Lowcost ◇Diffusedjunction ◇Lowleakage ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇EasilycleanedwitnFreon,Alcohol,lsopropanolandsimilarsolvents ◇TheplasticmaterialcarriesU/Lrecognition94V-0 | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | | | |
N-Channel Super Trench Power MOSFET 文件：316.45 Kbytes Page：7 Pages | RECTRON Rectron Semiconductor | | | |
N-Channel Super Trench Power MOSFET 文件：279.79 Kbytes Page：7 Pages | RECTRON Rectron Semiconductor | | | |
SILICON RECTIFIER DIODES 文件：39.49 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors | | | |
SILICON RECTIFIER DIODES 文件：48.14 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors | | | |
SILICON RECTIFIER DIODES 文件：48.14 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors | | | |
SILICON RECTIFIER DIODES 文件：48.14 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors | | | |
SILICON RECTIFIER DIODES 文件：39.49 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors | | | |
SILICON RECTIFIER DIODES 文件：48.14 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors | | | |
SILICON RECTIFIER DIODES 文件：39.49 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors | | | |
Rectifier Diodes 文件：70.39 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
N-Channel Super Junction Power MOSFET 文件：589.84 Kbytes Page：8 Pages | RECTRON Rectron Semiconductor | | | |
N-Channel Super Junction Power MOSFET 文件：589.84 Kbytes Page：8 Pages | RECTRON Rectron Semiconductor | | | |
N-Channel Super Junction Power MOSFET 文件：589.84 Kbytes Page：8 Pages | RECTRON Rectron Semiconductor | | |
RM11产品属性
- 类型
描述
- 型号
RM11
- 制造商
Thomas & Betts
- 功能描述
TOOL REPLCMT BLADES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RM |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
IN |
23+ |
SOT-89-3 |
15000 |
全新原装现货,价格优势 |
|||
SANKEN |
1950+ |
DO-15 |
4856 |
只做原装正品现货!或订货假一赔十! |
|||
SANKEN |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
三垦 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
VISHAY/威世 |
24+ |
DO-15 |
50000 |
全新原装,一手货源,全场热卖! |
|||
VISHAYMAS |
25+23+ |
DO-15 |
52720 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
REALTEK/瑞昱 |
23+ |
QFN |
4200 |
正规渠道原装正品 |
|||
SANKEN/三垦 |
25+ |
DO-15 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
EIC |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
RM11芯片相关品牌
RM11规格书下载地址
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2018-12-30
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