Description

The RM110N150T2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

RDS(ON) and Qg. This device is ideal for high-frequency

switching and synchro nous rectification.

General Features

VDS =150V,ID =110A

RDS(ON) <12mÙ @ VGS=10V

Excellent gate charge x RDS(on) product(FOM)

Very low on-resistance RDS(on)

175 °C operating temperature

Pb-free lead plating

100 UIS tested

Halogen-free

RDS(ON)