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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJP60D0DPP-M0 | Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating | RENESAS 瑞萨 |   | |
RJP60D0DPP-M0 | IGBTs | RENESAS 瑞萨 | | |
Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating | RENESAS 瑞萨 | | ||
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 45A 35W TO-220FL 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
Silicon N Channel IGBT High Speed Power Switching 文件：85.11 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
RJP60D0DPP-M0产品属性
- 类型
描述
- 型号
RJP60D0DPP-M0
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
RENESAS |
1922+ |
TO-220F |
480 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Renesas Electronics America In |
25+ |
TO-220-3 整包 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS |
24+ |
TO-220F |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
2023+ |
TO-220F |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
22+ |
TO-220FL |
6000 |
十年配单,只做原装 |
|||
RENESAS |
2511 |
TO-220F |
480 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS |
20+ |
TO-220F |
480 |
进口原装现货,假一赔十 |
|||
RENESAS |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
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2019-3-7
DdatasheetPDF页码索引
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