Silicon N Channel IGBT High Speed Power Switching

Features

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C)

 Gate to emitter voltage rating 30 V

 Pb-free lead plating and chip bonding