Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 A max. ● Isolated package TO-220FL

Silicon N Channel IGBT High speed power switching

* Trench gate and thin wafer technology (G6H-II series) * High speed switching: tr = 80 ns typ., tf = 150 ns typ. * Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. * Low leak current: ICES= 1 A max.

Silicon N Channel IGBT High speed power switching

* Trench gate and thin wafer technology (G6H-II series) * High speed switching: tr = 80 ns typ., tf = 150 ns typ. * Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. * Low leak current: ICES= 1 A max.

Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 A max. ● Isolated package TO-220FL

N-Channel Power MOSFET / TO-263

Silicon N Channel IGBT High speed power switching