位置：首页 > IC中文资料第5571页 > RJP30H1D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SiliconNChannelIGBTHighspeedpowerswitching Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Highspeedswitching:tr=80nstyp.,tf=150nstyp. ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. ●Lowleakcurrent:ICES=1Amax. ●IsolatedpackageTO-220FL | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  |   | |
SiliconNChannelIGBTHighspeedpowerswitching *Trenchgateandthinwafertechnology(G6H-IIseries) *Highspeedswitching:tr=80nstyp.,tf=150nstyp. *Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. *Lowleakcurrent:ICES=1Amax. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighspeedpowerswitching *Trenchgateandthinwafertechnology(G6H-IIseries) *Highspeedswitching:tr=80nstyp.,tf=150nstyp. *Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. *Lowleakcurrent:ICES=1Amax. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighspeedpowerswitching Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Highspeedswitching:tr=80nstyp.,tf=150nstyp. ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. ●Lowleakcurrent:ICES=1Amax. ●IsolatedpackageTO-220FL | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | |
RJP30H1D产品属性
- 类型
描述
- 型号
RJP30H1D
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High speed power switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
9548 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
|||
RENESAS |
24+ |
TO-263 |
56000 |
公司进口原装现货 批量特价支持 |
|||
RENESAS |
21+ |
TO-252 |
12588 |
原装正品,自己库存 假一罚十 |
|||
RENESAS |
24+ |
TO-220F |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS |
24+ |
TO-252 |
12000 |
原装 |
|||
IR |
24+ |
TO-252 |
501136 |
免费送样原盒原包现货一手渠道联系 |
|||
RENESAS |
18+ |
220F |
85600 |
保证进口原装可开17%增值税发票 |
|||
RENESAS/瑞萨 |
25+ |
ROHS |
880000 |
明嘉莱只做原装正品现货 |
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2019-3-7
DdatasheetPDF页码索引
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