位置：首页 > IC中文资料第5571页 > RJP30H1DPD
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RJP30H1DPD | SiliconNChannelIGBTHighspeedpowerswitching *Trenchgateandthinwafertechnology(G6H-IIseries) *Highspeedswitching:tr=80nstyp.,tf=150nstyp. *Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. *Lowleakcurrent:ICES=1Amax. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  |   |
SiliconNChannelIGBTHighspeedpowerswitching Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Highspeedswitching:tr=80nstyp.,tf=150nstyp. ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. ●Lowleakcurrent:ICES=1Amax. ●IsolatedpackageTO-220FL | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighspeedpowerswitching *Trenchgateandthinwafertechnology(G6H-IIseries) *Highspeedswitching:tr=80nstyp.,tf=150nstyp. *Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. *Lowleakcurrent:ICES=1Amax. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | |
RJP30H1DPD产品属性
- 类型
描述
- 型号
RJP30H1DPD
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High speed power switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2022+ |
TO-252 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
RENESAS |
14+ |
TO-252 |
1300 |
现货 |
|||
IR |
24+ |
TO-252 |
501136 |
免费送样原盒原包现货一手渠道联系 |
|||
RENESAS |
24+ |
SOT-252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS/瑞萨 |
2022+ |
TO-252 |
400 |
原厂代理 终端免费提供样品 |
|||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS |
2511 |
SOT-252 |
3900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
400 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
9548 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS/瑞萨 |
23+ |
SOT-252 |
50000 |
全新原装正品现货,支持订货 |
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2019-3-7
DdatasheetPDF页码索引
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