位置：首页 > IC中文资料第5571页 > RJP30H1DPD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJP30H1DPD | Silicon N Channel IGBT High speed power switching * Trench gate and thin wafer technology (G6H-II series) * High speed switching: tr = 80 ns typ., tf = 150 ns typ. * Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. * Low leak current: ICES= 1 A max. | RENESAS 瑞萨 |   | |
RJP30H1DPD | N-Channel Power MOSFET / TO-263 | RENESAS 瑞萨 | | |
Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 A max. ● Isolated package TO-220FL | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High speed power switching * Trench gate and thin wafer technology (G6H-II series) * High speed switching: tr = 80 ns typ., tf = 150 ns typ. * Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. * Low leak current: ICES= 1 A max. | RENESAS 瑞萨 | |
RJP30H1DPD产品属性
- 类型
描述
- 型号
RJP30H1DPD
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High speed power switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS |
25+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
|||
RENESAS/瑞萨 |
24+ |
TO-252 |
990000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
24+ |
SOT252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
RENESAS/瑞萨 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS/瑞萨 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
RENESAS/瑞萨 |
23+ |
PB-FREE |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
RJP30H1DPD规格书下载地址
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DdatasheetPDF页码索引
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