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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJP30H1DPP-M0 | Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 A max. ● Isolated package TO-220FL | RENESAS 瑞萨 |   | |
RJP30H1DPP-M0 | Silicon N Channel IGBT High speed power switching | RENESAS 瑞萨 | | |
Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ. | RENESAS 瑞萨 | |
RJP30H1DPP-M0产品属性
- 类型
描述
- 型号
RJP30H1DPP-M0
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High speed power switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
3400 |
原厂直销,现货供应,账期支持! |
|||
RENESAS |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
Renesas(瑞萨) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
RENESAS |
23+ |
NA |
19854 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
RENESAS/瑞萨 |
1 |
||||||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
24+ |
STO263-3 |
25000 |
一级专营品牌全新原装热卖 |
|||
RENESAS |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
RENESAS |
18+ |
TO-263 |
85600 |
保证进口原装可开17%增值税发票 |
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2019-3-7
DdatasheetPDF页码索引
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