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RJH60F4D价格
参考价格：￥11.5280
型号：RJH60F4DPQ-A0#T0 品牌：Renesas 备注：这里有RJH60F4D多少钱，2025年最近7天走势，今日出价，今日竞价，RJH60F4D批发/采购报价，RJH60F4D行情走势销售排行榜，RJH60F4D报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=30A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=80nstyp.(atIC= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  |   | |
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=30A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=80nstyp.(atIC= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=30A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=80nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω,Ta | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=30A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=80nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω,Ta | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching 文件：88.06 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching 文件：88.06 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching 文件：93.42 Kbytes Page：8 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching 文件：93.42 Kbytes Page：8 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 60A 235.8W TO-3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
SiliconNChannelIGBTHighSpeedPowerSwitching 文件：88.06 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 235.8W TO247A 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
600V-30A-IGBTHighSpeedPowerSwitching 文件：88.73 Kbytes Page：8 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
600V-30A-IGBTHighSpeedPowerSwitching Features ●Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=30A,VGE=15V,Ta=25°C) ●Trenchgateandthinwafertechnology ●Highspeedswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | |
RJH60F4D产品属性
- 类型
描述
- 型号
RJH60F4D
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
20+ |
TO-3P |
360 |
只做原装正品 |
|||
RENESAS |
24+ |
TO-3P |
4000 |
原装原厂代理 可免费送样品 |
|||
RENESAS原装 |
23+ |
TO-3P |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
RENESAS/瑞萨 |
22+ |
TO-3P |
20000 |
深圳原装现货正品有单价格可谈 |
|||
RENESAS |
1923+ |
TO-247 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
RENESAS/瑞萨 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
NORDI |
24+ |
QFN20 |
10000 |
原装正品价格优势!欢迎询价QQ:385913858TEL:15 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
66112 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
24+ |
TO3P |
10000 |
公司现货 |
|||
RENESAS/瑞萨 |
25+ |
TO-3P |
860000 |
明嘉莱只做原装正品现货 |
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RJH60F7DPQ，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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