RJH60F4D价格

参考价格:¥11.5280

型号:RJH60F4DPQ-A0#T0 品牌:Renesas 备注:这里有RJH60F4D多少钱,2026年最近7天走势,今日出价,今日竞价,RJH60F4D批发/采购报价,RJH60F4D行情走势销售排行榜,RJH60F4D报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 80 ns typ. (at IC=

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 80 ns typ. (at IC=

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

文件:88.06 Kbytes Page:7 Pages

RENESAS

瑞萨

IGBTs

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

文件:88.06 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

文件:93.42 Kbytes Page:8 Pages

RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

文件:93.42 Kbytes Page:8 Pages

RENESAS

瑞萨

封装/外壳:TO-220-3 整包 包装:管件 描述:IGBT 600V 60A 235.8W TO-3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ETC

知名厂家

Silicon N Channel IGBT High Speed Power Switching

文件:88.06 Kbytes Page:7 Pages

RENESAS

瑞萨

IGBTs

RENESAS

瑞萨

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 60A 235.8W TO247A 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ETC

知名厂家

600 V - 30 A - IGBT High Speed Power Switching

文件:88.73 Kbytes Page:8 Pages

RENESAS

瑞萨

600 V - 30 A - IGBT High Speed Power Switching

Features ● Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) ● Trench gate and thin wafer technology ● High speed switching

RENESAS

瑞萨

RJH60F4D产品属性

  • 类型

    描述

  • 型号

    RJH60F4D

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel IGBT High Speed Power Switching

更新时间:2026-1-4 8:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
20+21+
TO-3P
58550
金睿扬电子,只做全新原装正品可订货欢迎咨询QQ微信
Renesas
21+
标准封装
3860
进口原装,订货渠道!
Renesas
2023+
TO-3P
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS/瑞萨
24+
NA/
66112
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS/瑞萨
10+
TO-3P
58000
RENESAS/瑞萨
25+
TO3P
880000
明嘉莱只做原装正品现货
RENESAS
25+23+
TO-247
27178
绝对原装正品全新进口深圳现货
RENESAS
TO3P
56520
一级代理 原装正品假一罚十价格优势长期供货
RENESAS
1923+
TO-247
6896
原装进口现货库存专业工厂研究所配单供货
RENESAS/瑞萨
25+
TO-247
32360
RENESAS/瑞萨全新特价RJH60F4DPK-00#T0即刻询购立享优惠#长期有货

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