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RJH60F4D价格
参考价格：￥11.5280
型号：RJH60F4DPQ-A0#T0 品牌：Renesas 备注：这里有RJH60F4D多少钱，2026年最近7天走势，今日出价，今日竞价，RJH60F4D批发/采购报价，RJH60F4D行情走势销售排行榜，RJH60F4D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 80 ns typ. (at IC= | RENESAS 瑞萨 |   | ||
Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 80 ns typ. (at IC= | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：88.06 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
IGBTs | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：88.06 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：93.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：93.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 60A 235.8W TO-3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
Silicon N Channel IGBT High Speed Power Switching 文件：88.06 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
IGBTs | RENESAS 瑞萨 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 235.8W TO247A 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
600 V - 30 A - IGBT High Speed Power Switching 文件：88.73 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
600 V - 30 A - IGBT High Speed Power Switching Features ● Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) ● Trench gate and thin wafer technology ● High speed switching | RENESAS 瑞萨 | |
RJH60F4D产品属性
- 类型
描述
- 型号
RJH60F4D
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
TO-3P |
9000 |
只做原装，欢迎询价，量大价优 |
|||
RENESAS/瑞萨 |
2450+ |
TO-3P |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
20+ |
TO-3P |
360 |
只做原装正品 |
|||
RENESAS |
23+24 |
TO-247 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
RENESAS/瑞萨 |
25+ |
TO-247 |
32360 |
RENESAS/瑞萨全新特价RJH60F4DPK-00#T0即刻询购立享优惠#长期有货 |
|||
RENESAS原装 |
23+ |
TO-3P |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
RENESAS |
1923+ |
TO-247 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
RENESAS/瑞萨 |
25+ |
TO3P |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
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DdatasheetPDF页码索引
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