600 V - 30 A - IGBT High Speed Power Switching

Features ● Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) ● Trench gate and thin wafer technology ● High speed switching

IGBTs

600 V - 30 A - IGBT High Speed Power Switching

文件：85.61 Kbytes Page：7 Pages

封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 60A 41.2W TO-3PFM 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 80 ns typ. (at IC=

Silicon N Channel IGBT High Speed Power Switching

文件：88.06 Kbytes Page：7 Pages