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RFD3055价格
参考价格：￥1.7163
型号：RFD3055LE 品牌：Fairchild 备注：这里有RFD3055多少钱，2024年最近7天走势，今日出价，今日竞价，RFD3055批发/采购报价，RFD3055行情走势销售排行榜，RFD3055报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RFD3055 | 11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
RFD3055 | 12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
RFD3055 | 12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
RFD3055 | 12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor | HARRIS HARRIS corporation |  | |
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
N-ChannelLogicLevelPowerMOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
N-ChannelLogicLevelPowerMOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelLogicLevelPowerMOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor | HARRIS HARRIS corporation | | | |
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel60V(D-S)MOSFET 文件：960.61 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel60V(D-S)MOSFET 文件：1.00467 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
WASHERSANDNUTS [KEYSTONE] FIBRESHOULDERWASHERS HEXMACHINENUTS NYLONSHOULDERWASHER/BUSHINGS BLINDCAPTIVENUTS-PRESSFIT METRICMACHINENUTS | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs TheUGN3055UHall-effectsensorisadigitalmagneticsensingICcapableofcommunicatingoveratwo-wirepower/signalbus.Usingasequentialaddressingscheme,thedevicerespondstoasignalonthebusandreturnsthediagnosticstatusoftheIC,as | Allegro Allegro MicroSystems |  | | |
CustomerSpecification Construction 1)Component11X1HOOKUP a)Conductor18(16/30)AWGTinnedCopper0.047 b)Insulation0.016Wall,Nom.PVC0.079+/-0.002 (1)Print ALPHAWIREE163869-*RUAWMSTYLES1569105C OR100780C300VVW-1IEC60332-118AWG ORCRUTR-6490CFT1CEROHS {0}*=FactoryCode | ALPHAWIREAlpha Wire 阿尔法电线 |  | | |
N-Channel30-V(D-S)MOSFET 文件：959.93 Kbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
CustomerSpecification 文件：70.18 Kbytes Page：3 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | | |
RFD3055产品属性
- 类型
描述
- 型号
RFD3055
- 功能描述
MOSFET Power MOSFET N-Ch 60V/12a/0.150 Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
2339+ |
TO252 |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
FAIRCHILD/仙童 |
22+ |
TO252 |
9600 |
原装现货,优势供应,支持实单! |
|||
HARRIS |
23+ |
TO263-3 |
5000 |
原装正品,假一罚十 |
|||
onsemi(安森美) |
23+ |
DPAK-3 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
HARRIS/哈里斯 |
23+ |
NA/ |
3650 |
原厂直销,现货供应,账期支持! |
|||
INT/FSC |
17+ |
TO-252 |
6200 |
||||
HARRIS |
9527 |
500 |
优势货源原装正品 |
||||
ON/FAIRCHIL/INTERSIL |
21+ |
STT223 |
2500 |
原装现货 |
|||
Fairchild |
22+ |
TO-252 |
15800 |
绝对原装现货,价格低,欢迎询购! |
|||
FSC进口原 |
22+ |
TO-252 |
900 |
长源创新-只做原装---假一赔十 |
RFD3055芯片相关品牌
RFD3055规格书下载地址
RFD3055参数引脚图相关
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RFD3055数据表相关新闻
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只做原装正品，原包装标签欢迎咨询！
2021-6-10RFBLN0605040YM9T16深圳市光华微科技有限公司18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
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联系人：刘冬英 电话：0755-83203002 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
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只做原装，假一罚十，可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-14
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