POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)

GENERAL PUPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth Product (fT = 25 °C)

General Purpose and Switching Applications

General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.)

COMPLEMENTARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications.

Complementary Silicon Plastic Power Transistors

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier andswitching applications.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min) ·High DC Current Gain-: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type MJE2955T ·DC current gain -hFE= 20–70 @ IC=4Adc ·Collector–emitter saturation voltage - VCE(sat)= 1.1 Vdc (Max) @ IC=4Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Large DC current(IC=10A),high fT(fT≥2Mhz). Applications General purpose and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

Power Transistors

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS ...designed for usein general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 75 W © Tc = 25°C * DC Current Gain hFE = 20- 100 © lc = 4.0 A * vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

文件：213.09 Kbytes Page：2 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

音频功放晶体管

Bipolar Transistor

互补功率晶体管

Silicon NPN Power Transistors

文件：123.16 Kbytes Page：4 Pages

TO-220 - Power Transistors and Darlingtons

文件：76.15 Kbytes Page：3 Pages

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

Complementary Silicon Plastic Power Transistors

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications.

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications.

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications.

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications.

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications.

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications.

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications.

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications.

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：133.98 Kbytes Page：3 Pages

HIGH VOLTAGE TRANSISTOR

文件：133.98 Kbytes Page：3 Pages

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：133.98 Kbytes Page：3 Pages

HIGH VOLTAGE TRANSISTOR

文件：133.98 Kbytes Page：3 Pages

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：133.98 Kbytes Page：3 Pages

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：133.98 Kbytes Page：3 Pages

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：133.98 Kbytes Page：3 Pages

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：119.69 Kbytes Page：2 Pages

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLES 1569 105C OR 1007 80C 300V VW-1 IEC 60332-1 18 AWG OR CRU TR-64 90C FT1 CE ROHS {0} * = Factory Code

N-Channel 30-V (D-S) MOSFET

文件：959.93 Kbytes Page：8 Pages

Customer Specification

文件：70.18 Kbytes Page：3 Pages