11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

N-Channel Logic Level Power MOSFET

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 107mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N 沟道逻辑电平功率 MOSFET 60V，11A，107mΩ

N-Channel 60 V (D-S) MOSFET

文件：960.61 Kbytes Page：7 Pages

N-Channel Logic Level Power MOSFET

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 107mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

N-Channel Logic Level Power MOSFET

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

N 沟道，逻辑电平，功率 MOSFET，60V，11A，107mΩ

N-Channel 60 V (D-S) MOSFET

文件：1.00467 Mbytes Page：8 Pages

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955