MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time

N-Channel TMOS E-FET Power MOSFET

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MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

N-Channel TMOS E-FET Power MOSFET

MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS

Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so i

MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS RDS(on) = 0.18 OHM

N-Channel TMOS E-FET Power MOSFET

文件：196.97 Kbytes Page：7 Pages

N-Channel TMOS E-FET Power MOSFET

文件：196.97 Kbytes Page：7 Pages

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLES 1569 105C OR 1007 80C 300V VW-1 IEC 60332-1 18 AWG OR CRU TR-64 90C FT1 CE ROHS {0} * = Factory Code

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

Customer Specification

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N-Channel 30-V (D-S) MOSFET

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