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RFD3055LESM价格

参考价格:¥1.5600

型号:RFD3055LESM 品牌:FAIRCHILD 备注:这里有RFD3055LESM多少钱,2026年最近7天走势,今日出价,今日竞价,RFD3055LESM批发/采购报价,RFD3055LESM行情走势销售排行榜,RFD3055LESM报价。
型号 功能描述 生产厂家 企业 LOGO 操作
RFD3055LESM

11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

FAIRCHILD

仙童半导体

RFD3055LESM

N-Channel Logic Level Power MOSFET

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

FAIRCHILD

仙童半导体

RFD3055LESM

11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

INTERSIL

RFD3055LESM

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 107mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RFD3055LESM

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

BYCHIP

百域芯

RFD3055LESM

N 沟道,逻辑电平,功率 MOSFET,60V,11A,107mΩ

这些N沟道加强模式功率MOSFET采用最新制造工艺技术制造。 这种工艺使用接近LSI集成电路的特征尺寸,优化了硅原料利用率,可以带来出色的性能。 这些器件设计用于开关稳压器、开关转换器、电机驱动和继电器驱动器等应用。 此类晶体管可以直接通过集成电路运行。 以前的开发类型为TA49158。 •11A,60V\n•rDS(ON)= 0.107Ω\n•温度补偿式PSPICE®模型\n•峰值电流与脉宽曲线\n•UIS额定值曲线\n•相关文献;

ONSEMI

安森美半导体

N-Channel Logic Level Power MOSFET

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

FAIRCHILD

仙童半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00467 Mbytes Page:8 Pages

VBSEMI

微碧半导体

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

MOSPEC

统懋

MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time

MOTOROLA

摩托罗拉

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

MOTOROLA

摩托罗拉

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

MOTOROLA

摩托罗拉

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

MOSPEC

统懋

RFD3055LESM产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    60

  • VGS Max (V):

    ±16

  • VGS(th) Max (V):

    3

  • ID Max (A):

    11

  • PD Max (W):

    38

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    107

  • Qg Typ @ VGS = 10 V (nC):

    5.2

  • Ciss Typ (pF):

    350

  • Package Type:

    DPAK-3/TO-252-3

更新时间:2026-7-31 10:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Fairchild
26+
TO-252
15800
绝对原装现货,价格低,欢迎询购!
INFINEON
25+
TO-252
27500
原装正品,价格最低!
FAIRCHILD
24+
SOT252
5000
公司存货
FAIRCHILD/仙童
24+
TO252
54000
郑重承诺只做原装进口现货
FAIRCHILD
2025+
TO-252AA
3685
全新原厂原装产品、公司现货销售
INTERSIL
2402+
TO252
8324
原装正品!实单价优!
FAIRCHILD/仙童
24+
TO252
9600
原装现货,优势供应,支持实单!
AD
25+
SOT223
3000
原盒原标,正品现货 诚信经营 价格美丽 假一罚十
INTERSIL
26+
TO-252
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
INTERSIL
22+
TO252
3000
原装正品,支持实单

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