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位置：首页 > IC中文资料 > RF5110

型号 功能描述 生产厂家 企业 LOGO 操作
RF5110

3V GSM POWER AMPLIFIER

Product Description The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equ

RFMD

威讯联合

RF5110

3V GSM POWER AMPLIFIER

文件：278.59 Kbytes Page：14 Pages

RFMD

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RF5110

3V GSM POWER AMPLIFIER

QORVO

威讯联合

RF5110G

150 - 960 MHz, 3 V General Purpose / GSM Power Amplifier

Qorvo's RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900MHz band, and general purpose radio applications in standard sub-bands • Single 2.8V to 3.6V Supply\n• 32dBm Output Power\n• 52% Efficiency\n• 150MHz to 960MHz Operation;

QORVO

威讯联合

RF5110G

3V GSM POWER AMPLIFIER

Product Description The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular eq

RFMD

威讯联合

RF5110GPCBA-410

3V GSM POWER AMPLIFIER

Product Description The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular eq

RFMD

威讯联合

RF5110PCBA

3V GSM POWER AMPLIFIER

Product Description The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equ

RFMD

威讯联合

RF5110PCBA

3V GSM POWER AMPLIFIER

Product Description\nThe RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipme „ Single 2.7V to 4.8V Supply Voltage\n„ +36dBm Output Power at 3.5V\n„ 32dB Gain with Analog Gain Control\n„ 57% Efficiency\n„ 800MHz to 950MHz Operation\n„ Supports GSM and E-GSMApplications\n„ 3V GSM Cellular Handsets\n„ 3V Dual-Band/Triple-Band Hand sets\n„ GPRS Compatible\n„ Commercial and C;

QORVO

威讯联合

RF5110_1

3V GSM POWER AMPLIFIER

文件：278.59 Kbytes Page：14 Pages

RFMD

威讯联合

RF5110G

3V GSM POWER AMPLIFIER

文件：831.74 Kbytes Page：22 Pages

RFMD

威讯联合

RF5110G

3V General Purpose/GSM Power Amplifier

文件：2.29673 Mbytes Page：16 Pages

QORVO

威讯联合

RF5110G_07

3V GSM POWER AMPLIFIER

文件：831.74 Kbytes Page：22 Pages

RFMD

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RF5110G_15

GENERAL PURPOSE / GSM POWER AMPLIFIER

文件：3.49514 Mbytes Page：24 Pages

RFMD

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RF5110GPCBA-410

3V GSM POWER AMPLIFIER

文件：831.74 Kbytes Page：22 Pages

RFMD

威讯联合

RF5110GPCK-410

3V General Purpose/GSM Power Amplifier

文件：2.29673 Mbytes Page：16 Pages

QORVO

威讯联合

RF5110GTR7

3V General Purpose/GSM Power Amplifier

文件：2.29673 Mbytes Page：16 Pages

QORVO

威讯联合

RF5110GTR7

3V GSM POWER AMPLIFIER

文件：831.74 Kbytes Page：22 Pages

RFMD

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RF5110PCBA

3V GSM POWER AMPLIFIER

文件：278.59 Kbytes Page：14 Pages

RFMD

威讯联合

MAZ5110

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

PANASONIC

松下

MGFC5110

Ka-Band 3-Stage Self Bias Low Noise Amplifier

DESCRIPTION The MGFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Low Noise Amplifier.(LNA) . FEATURES ● RF frequency : 37.0 to 40.0 GHz ● Super Low Noise NF=3.5dB (TYP.)

MITSUBISHI

三菱电机

LN5110ALAMW

Numeric Display

文件：20.84 Kbytes Page：1 Pages

PANASONIC

松下

LN5110GAMW

Numeric Display

文件：21.52 Kbytes Page：1 Pages

PANASONIC

松下

LN5110OGAMW

Numeric Display

文件：20.59 Kbytes Page：1 Pages

PANASONIC

松下

RF5110产品属性

  • 类型

    描述

  • 频率最大值(MHz)：

    960

  • 增益(dB)：

    31.5

  • Pout(dBm)：

    32

  • PAE(%)：

    52

  • 电压(V)：

    3.5

  • 封装类型：

    QFN

  • 封装(mm)：

    3.0 x 3.0

RF5110供应商更多...

更新时间：2026-7-23 20:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华睿芯科技有限公司
RF5110GTR7
Qorvo
24+
QFN-16
3280
原厂原装正品现货,代理渠道,支持订货!!!
询价
深圳市科恒伟业电子有限公司
RF5110GTR7
QORVO
24+
QFN-16
7850
只做原装正品现货或订货假一赔十!
询价
千层芯半导体(深圳)有限公司
RF5110GTR
RFMD
24+
QFN-16
5500
RFMD专营原装现货优势热卖
询价
深圳市宇创芯科技有限公司
RF5110GTR7
Qorvo
24+
N/A
9826
原装正品现货支持实单
询价
深圳市赛特兴科技有限公司
RF5110GTR7
QORVO
23+
QFN
15300
正规渠道,只有原装!
询价
深圳科宇泰科技有限公司
RF5110G
QORVO
19+
标准封装
7500
询价
深圳市恒达亿科技有限公司
RF5110GTR7
QORVO
25+
QFN
6000
全新原装现货、诚信经营!
询价
深圳市高捷芯城科技有限公司
RF5110
26+
10548
原厂订货渠道,支持账期,一站式服务!
询价
齐创科技(上海,北京,青岛)有限公司
RF5110G
RFMD
23+
QFN16
8000
原装正品,假一罚十
询价
深圳市坤融电子科技有限公司
RF5110GTR7
QORVO
2025+
QFN
5000
原装进口,免费送样品!
询价

RF5110芯片相关品牌

RF5110规格书下载地址

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