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RF5110PCBA中文资料
RF5110PCBA数据手册规格书PDF详情
Product Description
The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5110 can be used together with the RF5111 for dual-band operation. The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space.
Features
Single 2.7V to 4.8V Supply Voltage
+36dBm Output Power at 3.5V
32dB Gain with Analog Gain Control
57 Efficiency
800MHz to 950MHz Operation
Supports GSM and E-GSM
Applications
3V GSM Cellular Handsets
3V Dual-Band/Triple-Band Hand sets
GPRS Compatible
Commercial and Consumer Systems
Portable Battery-Powered Equipment
RF5110PCBA产品属性
- 类型
描述
- 型号
RF5110PCBA
- 制造商
RFMD
- 制造商全称
RF Micro Devices
- 功能描述
3V GSM POWER AMPLIFIER
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RFMD |
2023+ |
QFN |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RFMD |
23+ |
QFN |
2000 |
全新原装正品现货,支持订货 |
|||
RFMD |
20+ |
QFN |
2000 |
进口原装现货,假一赔十 |
|||
RFMD |
2017+ |
SMD |
1585 |
只做原装正品假一赔十! |
|||
RFMD |
22+ |
QFN |
12500 |
原装正品现货 |
|||
RFMD |
1923+ |
QFN16 |
9000 |
原装进口现货库存专业工厂研究所配单供货 |
|||
RFMD |
23+ |
SMD |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
RFMD |
20+ |
QFN |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
RFMD |
0628+ |
QFN |
200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RFMD |
23+ |
QFN |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
RF5110PCBA 资料下载更多...
RF5110PCBA 芯片相关型号
- C052C569F5G5CA
- C052C689F5G5CA
- C052G102J5C0G5CP
- C056G102K5C0G5CP
- C0805A121M2GAH
- C0805A910M2GAH
- C0805C270FZGAC
- C114G102D2C0G5CP
- C1206C270FZGAC
- C322C339G2R5HA
- C410C109J2G5HA
- C512G102D2C0G5CP
- C522C339F5G5CA
- C522G102K5C0G5CP
- CDR02BX109ADSR
- RF3807PCK-415
- RF3809PCK-412
- RF5111PCBA-41X
- T419A105J020MB4250
- T493B227J006CC6230
- T493D227J006CC6230
- T498A227K006AGE500
- T498B156K006AGE500
- T498D156K006AGE500
- T499A475K010AGE500
- T499B225K010AGE500
- T499B475K010AGE500
- T499X225K010AGE500
- T499X335K010AGE500
- XC6107D619
Datasheet数据表PDF页码索引
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RF Micro Devices 威讯联合半导体(德州)有限公司
RF Micro Devices于1991年由Analog Devices的前员工William J. Pratt、Powell T. Seymour和Jerry D. Neal在美国北卡罗来纳州格林斯博罗创立。从一开始它就专注于为商业无线市场设计射频集成电路(RFIC)产品。其产品主要包括用于无线通信的射频集成电路放大装置(RFICs)和信号处理传输设备。它们在诸如手机、无线基础设施、无线局域网(WLAN)、有线电视/宽带、航空航天和国防等市场有广泛应用。例如,它生产手机备件,是全球主要的功率放大器供应商。它还生产用于无线基础设施、有线电视调制解调器、个人通信系统和双向数据寻呼机的组件。 R