3V GSM POWER AMPLIFIER

Product Description The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equ

3V GSM POWER AMPLIFIER

Product Description\nThe RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipme „ Single 2.7V to 4.8V Supply Voltage\n„ +36dBm Output Power at 3.5V\n„ 32dB Gain with Analog Gain Control\n„ 57% Efficiency\n„ 800MHz to 950MHz Operation\n„ Supports GSM and E-GSMApplications\n„ 3V GSM Cellular Handsets\n„ 3V Dual-Band/Triple-Band Hand sets\n„ GPRS Compatible\n„ Commercial and C;

3V GSM POWER AMPLIFIER

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

Ka-Band 3-Stage Self Bias Low Noise Amplifier

DESCRIPTION The MGFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Low Noise Amplifier.(LNA) . FEATURES ● RF frequency : 37.0 to 40.0 GHz ● Super Low Noise NF=3.5dB (TYP.)

Numeric Display

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Numeric Display

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Numeric Display

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