位置:RF5110 > RF5110详情
RF5110中文资料
RF5110数据手册规格书PDF详情
Product Description
The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5110 can be used together with the RF5111 for dual-band operation. The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space.
Features
Single 2.7V to 4.8V Supply Voltage
+36dBm Output Power at 3.5V
32dB Gain with Analog Gain Control
57 Efficiency
800MHz to 950MHz Operation
Supports GSM and E-GSM
Applications
3V GSM Cellular Handsets
3V Dual-Band/Triple-Band Hand sets
GPRS Compatible
Commercial and Consumer Systems
Portable Battery-Powered Equipment
RF5110产品属性
- 类型
描述
- 型号
RF5110
- 制造商
RFMD
- 制造商全称
RF Micro Devices
- 功能描述
3V GSM POWER AMPLIFIER
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RFMD |
2025+ |
QFN16 |
32560 |
原装优势绝对有货 |
|||
RFMD |
25+ |
QFN16 |
5000 |
原装正品!!!优势库存!0755-83210901 |
|||
RFMD |
2020+ |
QFN |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
RFMD |
23+ |
QFN16 |
8000 |
原装正品,假一罚十 |
|||
RFMD |
24+ |
QFN-16 |
5500 |
RFMD专营原装现货优势热卖 |
|||
RFMD |
0550+ |
DFN-16 |
6000 |
原装正品现货 |
|||
RFMD |
23+ |
QFN-16 |
90000 |
只做原装 !全系列供应可长期供货稳定价格优势! |
|||
RFMD |
2023+ |
N/A |
4550 |
全新原装正品 |
|||
RFMD |
24+ |
QFN-16 |
5500 |
原装正品 特价现货(香港 新加坡 日本) |
|||
RFMD |
24+ |
- |
22312 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
RF5110 资料下载更多...
RF5110相关电子新闻
GSM功率放大器RF5110G原装现货
深圳市大唐盛世半导体有限公司手机:17727572380。电话:0755-83226739QQ:626839837。微信号:15096137729
2019-12-3
RF5110 芯片相关型号
- C0603C758G4UAC
- C1206C123B2GC
- C1808Z119J1XAH
- C1812C240FZGAC
- C1825Z119J1XAH
- C2225Z119J1XAH
- C322C479G2R5HA
- C522C689F5G5CA
- CDR32BP109ADSR
- GB12232AHYAAMLA-V01
- GB12232BNYAAMLA-V01
- GB12864FHYABNLA-V02
- GB160160BNYBAMDA-V00
- GB162BHYAANUB-V01
- GB162FSGABMLA-V01
- GB19264DSYAANLA-V00
- GB204BSGBAMLA-V01
- GB204CHGBAMLA-V01
- GB240128ANGBAMDA-V02
- GG2015TWUNNRNP-V00-NOCX
- GG2021SYDMPRNP-V00-LBCX
- GG2033TYDMPRNP-V00-NOCX
- GT2001SWDMPRNP-V00-NOCX
- M80-5652005
- RF5117
- RF5125PCBA-41X
- T419C105J020MB4250
- T493B227M006AH6230
- T498C156K006AGE500
- XC6114D619
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
RF Micro Devices 威讯联合半导体(德州)有限公司
RF Micro Devices于1991年由Analog Devices的前员工William J. Pratt、Powell T. Seymour和Jerry D. Neal在美国北卡罗来纳州格林斯博罗创立。从一开始它就专注于为商业无线市场设计射频集成电路(RFIC)产品。其产品主要包括用于无线通信的射频集成电路放大装置(RFICs)和信号处理传输设备。它们在诸如手机、无线基础设施、无线局域网(WLAN)、有线电视/宽带、航空航天和国防等市场有广泛应用。例如,它生产手机备件,是全球主要的功率放大器供应商。它还生产用于无线基础设施、有线电视调制解调器、个人通信系统和双向数据寻呼机的组件。 R