位置:RF5110GPCBA-410 > RF5110GPCBA-410详情

RF5110GPCBA-410中文资料

厂家型号

RF5110GPCBA-410

文件大小

233.55Kbytes

页面数量

18

功能描述

3V GSM POWER AMPLIFIER

数据手册

下载地址一下载地址二到原厂下载

生产厂商

RFMD

RF5110GPCBA-410数据手册规格书PDF详情

Product Description

The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5110G can be used together with the RF5111 for dual-band operation. The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space.

Features

Single 2.7V to 4.8V Supply Volt age

+36dBm Output Power at 3.5V

32dB Gain with Analog Gain Control

57 Efficiency

800MHz to 950MHz Operation

Supports GSM and E-GSM

Applications

3V GSM Cellular Handsets

3V Dual-Band/Triple-Band Hand sets

GPRS Compatible

Commercial and Consumer Systems

Portable Battery-Powered Equipment

FM Radio Applications:

150MHz/220MHz/

450MHz/865MHz/915MHz

RF5110GPCBA-410产品属性

  • 类型

    描述

  • 型号

    RF5110GPCBA-410

  • 制造商

    RFMD

  • 制造商全称

    RF Micro Devices

  • 功能描述

    3V GSM POWER AMPLIFIER

更新时间:2025-11-26 11:01:00
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绝对有现货,不止网上数量!原装正品,假一赔十!
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原装/现货
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当天发货全新原装现货
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明嘉莱只做原装正品现货
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就找我吧!--邀您体验愉快问购元件!
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