位置:RF5110GPCBA-410 > RF5110GPCBA-410详情
RF5110GPCBA-410中文资料
RF5110GPCBA-410数据手册规格书PDF详情
Product Description
The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5110G can be used together with the RF5111 for dual-band operation. The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space.
Features
Single 2.7V to 4.8V Supply Volt age
+36dBm Output Power at 3.5V
32dB Gain with Analog Gain Control
57 Efficiency
800MHz to 950MHz Operation
Supports GSM and E-GSM
Applications
3V GSM Cellular Handsets
3V Dual-Band/Triple-Band Hand sets
GPRS Compatible
Commercial and Consumer Systems
Portable Battery-Powered Equipment
FM Radio Applications:
150MHz/220MHz/
450MHz/865MHz/915MHz
RF5110GPCBA-410产品属性
- 类型
描述
- 型号
RF5110GPCBA-410
- 制造商
RFMD
- 制造商全称
RF Micro Devices
- 功能描述
3V GSM POWER AMPLIFIER
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RFMD |
2447 |
QFN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RFMD |
21+ |
QFN |
1356 |
绝对有现货,不止网上数量!原装正品,假一赔十! |
|||
RFMD |
11+ |
QFN |
31 |
原装/现货 |
|||
RFMD |
23+ |
QFN |
8678 |
原厂原装 |
|||
RFMD |
23+ |
QFN |
89630 |
当天发货全新原装现货 |
|||
RFMD |
22+ |
QFN |
30000 |
只做原装正品 |
|||
RFMD |
25+ |
QFN |
880000 |
明嘉莱只做原装正品现货 |
|||
RFMD |
11+ |
QFN |
31 |
原装现货 |
|||
RFMD |
25+ |
射频元件 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
RFMD |
18+ |
QFN16 |
85600 |
保证进口原装可开17%增值税发票 |
RF5110GPCBA-410 资料下载更多...
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RFMD相关芯片制造商
Datasheet数据表PDF页码索引
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