位置：首页 > IC中文资料第6376页 > PTF21030
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
LDMOSRFPowerFieldEffectTransistor30W,2110-2170MHz Description ThePTF210301isa30W,internallymatchedGOLDMOSFETintendedforWCDMAapplicationsfrom2110to2170MHz.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •Typicaltwo–carrierWCDMAperformance -Averageout | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   | |
LDMOSRFPowerFieldEffectTransistor30W,2110-2170MHz Description ThePTF210301isa30W,internallymatchedGOLDMOSFETintendedforWCDMAapplicationsfrom2110to2170MHz.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •Typicaltwo–carrierWCDMAperformance -Averageout | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
LDMOSRFPowerFieldEffectTransistor30W,2110-2170MHz Description ThePTF210301isa30W,internallymatchedGOLDMOSFETintendedforWCDMAapplicationsfrom2110to2170MHz.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features •Broadbandinternalmatching •Typicaltwo–carrierWCDMAperformance -Averageout | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
RFPOWERTRANSISTORSLdmosEnhancedTechnology DESCRIPTION TheLET21030CisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto2.1GHz.TheLET21030Cisdesignedforhighgainandbroadbandperformanceoperatingincommonsource | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
RFPOWERFIELDEFFECTTRANSISTORSN-CHANNELENANCEMENT-MODELATERALMOSFETS TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2.0to2.2GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cell | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
30W,2.110GHz-2.170GHz,N-ChannelE-Mode,LateralMOSFET 文件：371.51 Kbytes Page：9 Pages | TriQuint TriQuint Semiconductor |  | | |
LowLossCWDM 文件：351.5 Kbytes Page：2 Pages | OPLINK OPLINK Communications Inc. |  | | |
LowLossCWDM 文件：351.5 Kbytes Page：2 Pages | OPLINK OPLINK Communications Inc. | | |
PTF21030产品属性
- 类型
描述
- 型号
PTF21030
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
23 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
23+ |
高频 |
20000 |
全新原装假一赔十 |
|||
INFINEON |
1844+ |
NA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINE0N |
24+ |
122 |
现货供应 |
||||
INFINEON/英飞凌 |
22+ |
TO63 |
20000 |
原装现货,实单支持 |
|||
n |
24+ |
n |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Z |
2022 |
Z |
2400 |
原装现货 |
|||
INFINEON |
05/06+ |
1426 |
全新原装100真实现货供应 |
||||
INFINEON |
23+ |
原厂封装 |
7936 |
PTF21030芯片相关品牌
PTF21030规格书下载地址
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2019-10-29
DdatasheetPDF页码索引
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