30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

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射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.11-2.17GHz 7Watt Gain 14.5dB

30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source

RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

Low Loss CWDM

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Low Loss CWDM

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