位置：首页 > IC中文资料第7383页 > AGR21030EF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
AGR21030EF | 30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET 文件：371.51 Kbytes Page：9 Pages | TriQuint |   | |
RF POWER TRANSISTORS Ldmos Enhanced Technology DESCRIPTION The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source | STMICROELECTRONICS 意法半导体 | | ||
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell | Motorola 摩托罗拉 | | ||
Low Loss CWDM 文件：351.5 Kbytes Page：2 Pages | OPLINK OPLINK Communications Inc. | | ||
Low Loss CWDM 文件：351.5 Kbytes Page：2 Pages | OPLINK OPLINK Communications Inc. | |
AGR21030EF产品属性
- 类型
描述
- 型号
AGR21030EF
- 功能描述
射频MOSFET电源晶体管 RF Transistor
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2017+ |
SMD |
6528 |
只做原装正品假一赔十! |
||||
AGERE |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
TRIQUINT |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
AGERE |
23+ |
SMD |
7300 |
专注配单,只做原装进口现货 |
|||
TRIQUINT |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
10 |
||||||
AGERE |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
AGERE |
23+ |
SMD |
7300 |
专注配单,只做原装进口现货 |
|||
TRIQUINT |
24+ |
NA/ |
17 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TRIQUINT |
25+ |
SMD |
17 |
原装正品,欢迎来电咨询! |
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AGR21030EF规格书下载地址
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AGQ200A12Z，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-8
DdatasheetPDF页码索引
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